Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si

Yutaka Ohno, Kaihei Inoue, Kentaro Kutsukake, Momoko Deura, Takayuki Ohsawa, Ichiro Yonenaga, Hideto Yoshida, Seiji Takeda, Ryo Taniguchi, Hideki Otubo, Sigeto R. Nishitani, Naoki Ebisawa, Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, Yasuyoshi Nagai

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We investigate copper (Cu) precipitation at small-angle tilt boundaries on (220) in Czochralski-grown p-type silicon (Si) ingots using transmission electron microscopy, atom probe tomography, and ab initio calculations. In the initial stage of precipitation, Cu atoms agglomerate along the boundaries, forming coherent layers (less than about 2 nm thick) of Cu3Si with a body-centered-cubic structure in a metastable state (a=0.285 nm). As the layers thicken, they become semicoherent with misfit dislocations on the (220) interphase boundaries, reducing coherency strains. Subsequently, the metastable layers convert into incoherent polyhedrons of orthorhombic η′′-Cu3Si in the equilibrium state, forming interphase boundaries on {112} in Si. These results are similar to the Cu precipitation processes found in metallic alloys: the formation of Guinier-Preston zones followed by a conversion into the equilibrium θ phase.

Original languageEnglish
Article number235315
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number23
DOIs
Publication statusPublished - 2015 Jun 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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