TY - JOUR
T1 - Nanoscale observation of a single graphene oxide layer using scanning tunneling microscopy
AU - Katano, Satoshi
AU - Wei, Tao
AU - Sasajima, Takumi
AU - Uehara, Yoichi
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2017
Y1 - 2017
N2 - Nano-scale structures of a single graphene oxide (GO) layer deposited on Au(111) covered with the octanethiolate self-assembled monolayer (C8S-SAM) have been investigated by scanning tunneling microscopy (STM). Using a spin-coating method, we found that GO akes are isolated and are dispersed on the C8S-SAM/Au(111) surface whereas these are likely to pile up on the bare Au(111) surface. Furthermore, the C8S-SAM formed on Au(111) enables us to deposit GO keeping the surface clean even if we prepared the sample in the atmosphere. By using the C8S-SAM/Au(111) substrate, we succeeded in observing an STM image of the unreduced GO. The STM image of a single GO layer exhibits the grain-like structure having the range in height from 0.6 to 1.1 nm. The bias-dependent STM study indicated that the STM image of GO is stably and reproducibly obtained at the voltage where the density of states of GO exists.
AB - Nano-scale structures of a single graphene oxide (GO) layer deposited on Au(111) covered with the octanethiolate self-assembled monolayer (C8S-SAM) have been investigated by scanning tunneling microscopy (STM). Using a spin-coating method, we found that GO akes are isolated and are dispersed on the C8S-SAM/Au(111) surface whereas these are likely to pile up on the bare Au(111) surface. Furthermore, the C8S-SAM formed on Au(111) enables us to deposit GO keeping the surface clean even if we prepared the sample in the atmosphere. By using the C8S-SAM/Au(111) substrate, we succeeded in observing an STM image of the unreduced GO. The STM image of a single GO layer exhibits the grain-like structure having the range in height from 0.6 to 1.1 nm. The bias-dependent STM study indicated that the STM image of GO is stably and reproducibly obtained at the voltage where the density of states of GO exists.
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U2 - 10.3131/jvsj2.60.495
DO - 10.3131/jvsj2.60.495
M3 - Article
AN - SCOPUS:85039839572
VL - 60
SP - 495
EP - 498
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
SN - 1882-2398
IS - 12
ER -