Abstract
The long-term native oxidation of Cu films has been investigated at the nanoscale by angle resolved X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and high-resolution transmission electron microscopy. Cu films with different microstructures and crystallographic textures were deposited by with or without a negative substrate bias voltage of - 50 V. The oxidation rate of the Cu films deposited at - 50 V is much lower than that of the Cu films deposited at 0 V. The electron microscopy observation showed that the Cu films deposited at 0 V have two oxide layers, namely, an outer CuO and an inner Cu2O, whereas the oxide layer of the Cu films deposited at - 50 V consists of only Cu2O layer. The difference of texture between the Cu films deposited at 0 V and - 50 V is found to affect native oxidation behavior. It is also considered that many defects in the Cu films deposited at 0 V provide preferential nucleation sites and subsequent growth, which promotes Cu oxidation. The difference in the oxidation behavior of the two Cu films and high-purity bulk Cu can be mainly explained by the difference in texture and microstructure.
Original language | English |
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Pages (from-to) | 4040-4046 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2008 Apr 30 |
Externally published | Yes |
Keywords
- Copper
- CuO
- CuO
- Oxidation
- Purity
- Substrate bias voltage
- Thin film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry