Nanoscale investigation of long-term native oxidation of Cu films

Jae Won Lim, Jun Iijima, Yongfu Zhu, Jung Ho Yoo, Good Sun Choi, Koji Mimura, Minoru Isshiki

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

The long-term native oxidation of Cu films has been investigated at the nanoscale by angle resolved X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and high-resolution transmission electron microscopy. Cu films with different microstructures and crystallographic textures were deposited by with or without a negative substrate bias voltage of - 50 V. The oxidation rate of the Cu films deposited at - 50 V is much lower than that of the Cu films deposited at 0 V. The electron microscopy observation showed that the Cu films deposited at 0 V have two oxide layers, namely, an outer CuO and an inner Cu2O, whereas the oxide layer of the Cu films deposited at - 50 V consists of only Cu2O layer. The difference of texture between the Cu films deposited at 0 V and - 50 V is found to affect native oxidation behavior. It is also considered that many defects in the Cu films deposited at 0 V provide preferential nucleation sites and subsequent growth, which promotes Cu oxidation. The difference in the oxidation behavior of the two Cu films and high-purity bulk Cu can be mainly explained by the difference in texture and microstructure.

Original languageEnglish
Pages (from-to)4040-4046
Number of pages7
JournalThin Solid Films
Volume516
Issue number12
DOIs
Publication statusPublished - 2008 Apr 30

Keywords

  • Copper
  • CuO
  • CuO
  • Oxidation
  • Purity
  • Substrate bias voltage
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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