Nanoscale epitaxial growth of GaN on freestanding circular GaN grating

Yongjin Wang, Fangren Hu, Kazuhiro Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Freestanding circular GaN gratings are fabricated on a GaN-on-silicon substrate, and epitaxial growth of GaN is subsequently conducted on the prepared GaN template by molecular beam epitaxy growth. With the assistance of circular GaN gratings, the surface diffusion is improved and thus, the selective growth of GaN takes place. Epitaxial circular gratings with InGaN/GaN multiple quantum wells are generated with self-organized lateral facets and demonstrate the promising photoluminescence performances. This work provides a feasible approach to produce integrated GaN-Si devices by a combination of fast atom beam etching of GaN, silicon micromachining and epitaxial growth of GaN.

Original languageEnglish
Title of host publication2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Pages163-164
Number of pages2
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 - Sapporo, Japan
Duration: 2010 Aug 92010 Aug 12

Publication series

Name2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010

Other

Other2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Country/TerritoryJapan
CitySapporo
Period10/8/910/8/12

Keywords

  • Circular grating
  • Fast atom beam etching
  • GaN-on-silicon
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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