Nanoscale Al patterning on an STM-manipulated Si surface

T. Ono, H. Hamanaka, T. Kurabayashi, Kimitaka Minami, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Selective deposition of H atoms on silicon was achieved by using a UHV-STM with a Pd tip. The deposition of hydrogen atoms occurs on the Si(100) 2×1 surface at a negative sample bias in a pressure of 1×10-10 Torr. The H atom adsorbed sites appear dark in a constant current mode in an STM image. H atoms are supplied from the Pd tip, while, at a positive bias, adsorbed H atoms get desorbed. The surface was selectively oxidized by exposing it to oxygen (1.0 × 10-5 Torr, 60 s, at room temperature). Nanoscale Al patterns were made by selective Al CVD on the H-terminated Si surface using DMAH (dimethylaluminium hydride) as a gas source.

Original languageEnglish
Pages (from-to)640-643
Number of pages4
JournalThin Solid Films
Volume281-282
Issue number1-2
DOIs
Publication statusPublished - 1996 Aug 1

Keywords

  • Chemical vapour deposition (CVD)
  • Scanning tunnelling microscopy (STM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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