Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy

C. Iwamoto; X. Q. Shen; H. Okumura; H. Matuhata; Y. Ikuhara

doi:10.1063/1.1427147

Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy

C. Iwamoto, X. Q. Shen, H. Okumura, H. Matuhata, Y. Ikuhara

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.

Original language	English
Pages (from-to)	3941-3943
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	24
DOIs	https://doi.org/10.1063/1.1427147
Publication status	Published - 2001 Dec 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.",

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AU - Iwamoto, C.

AU - Shen, X. Q.

AU - Okumura, H.

AU - Matuhata, H.

AU - Ikuhara, Y.

PY - 2001/12/10

Y1 - 2001/12/10

N2 - GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.

AB - GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.

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Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy

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