Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy

C. Iwamoto, X. Q. Shen, H. Okumura, H. Matuhata, Y. Ikuhara

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    22 Citations (Scopus)

    Abstract

    GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.

    Original languageEnglish
    Pages (from-to)3941-3943
    Number of pages3
    JournalApplied Physics Letters
    Volume79
    Issue number24
    DOIs
    Publication statusPublished - 2001 Dec 10

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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