Abstract
GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.
Original language | English |
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Pages (from-to) | 3941-3943 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2001 Dec 10 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)