Abstract
Nanometer-scale Si/Au bilayer dots were fabricated on aflat Si surface. Au particles were produced by the gas-phase condensation method and deposited on the Si substrate. Post-thermal annealing in ultrahigh vacuum resulted in the formation of bilayer dots. The kinetics of bilayer formation was described as a process of self-assembly through liquid phase epitaxy. Then, one-directional diffusion was observed, although interdiffusion between the two elements commonly occurred at the Si/Au interface. The Au particles play the role of the transport medium. Namely, a few monolayers of the surface Si were dissolved into Au, formed SiAu alloy which was then regrown on the surface shape of dot with the Au particle on it.
Original language | English |
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Pages (from-to) | 1033-1039 |
Number of pages | 7 |
Journal | Nanostructured Materials |
Volume | 8 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1997 Dec |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics