TY - GEN
T1 - NANOMETER E-BEAM LITHOGRAPHY USING 2-LAYER RESIST SYSTEM COMPOSED OF SILICONE-BASED NEGATIVE RESIST (SNR).
AU - Sugita, Akio
AU - Morita, Masao
AU - Tamamura, Toshiaki
PY - 1984/12/1
Y1 - 1984/12/1
N2 - As an E-beam fabrication process in deep-submicron - nanometer region, 2-layer resist system using Silicone-based Negative Resist (SNR) was proposed. A high resolution, high aspect ratio, large E-beam dosage margin and little proximity effect in this system allows various high resolution E-beam lithographies on solid substrate. Fine gratings with minimum pitch of 0. 18 mu m, minimum linewidth of 0. 07 mu m, and aspect ratio of 6. 5 were delineated. SNR 2-layer resist patterns were applied to the fabrication of high contrast x-ray mask by RIE and small windows for Josephson junction by lift-off.
AB - As an E-beam fabrication process in deep-submicron - nanometer region, 2-layer resist system using Silicone-based Negative Resist (SNR) was proposed. A high resolution, high aspect ratio, large E-beam dosage margin and little proximity effect in this system allows various high resolution E-beam lithographies on solid substrate. Fine gratings with minimum pitch of 0. 18 mu m, minimum linewidth of 0. 07 mu m, and aspect ratio of 6. 5 were delineated. SNR 2-layer resist patterns were applied to the fabrication of high contrast x-ray mask by RIE and small windows for Josephson junction by lift-off.
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M3 - Conference contribution
AN - SCOPUS:0021604115
SN - 4930813077
T3 - Conference on Solid State Devices and Materials
SP - 19
EP - 22
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -