As an E-beam fabrication process in deep-submicron - nanometer region, 2-layer resist system using Silicone-based Negative Resist (SNR) was proposed. A high resolution, high aspect ratio, large E-beam dosage margin and little proximity effect in this system allows various high resolution E-beam lithographies on solid substrate. Fine gratings with minimum pitch of 0. 18 mu m, minimum linewidth of 0. 07 mu m, and aspect ratio of 6. 5 were delineated. SNR 2-layer resist patterns were applied to the fabrication of high contrast x-ray mask by RIE and small windows for Josephson junction by lift-off.