NANOMETER E-BEAM LITHOGRAPHY USING 2-LAYER RESIST SYSTEM COMPOSED OF SILICONE-BASED NEGATIVE RESIST (SNR).

Akio Sugita, Masao Morita, Toshiaki Tamamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As an E-beam fabrication process in deep-submicron - nanometer region, 2-layer resist system using Silicone-based Negative Resist (SNR) was proposed. A high resolution, high aspect ratio, large E-beam dosage margin and little proximity effect in this system allows various high resolution E-beam lithographies on solid substrate. Fine gratings with minimum pitch of 0. 18 mu m, minimum linewidth of 0. 07 mu m, and aspect ratio of 6. 5 were delineated. SNR 2-layer resist patterns were applied to the fabrication of high contrast x-ray mask by RIE and small windows for Josephson junction by lift-off.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages19-22
Number of pages4
ISBN (Print)4930813077
Publication statusPublished - 1984 Dec 1
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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