Nanolithography by electron beam resist-trimming technique

Tatsuro Maeda, Kenichi Ishii, Eiichi Suzuki, Hiroshi Hiroshima, Tsutomu Iida, Yoshihumi Takanashi, Parhat Ahmet, Toyohiro Chikyow, Hirohisa Taguchi

Research output: Contribution to journalArticlepeer-review

Abstract

We have investigated a resist-trimming process for SAL601 chemically amplified negative electron beam resist. Ultra-fine SAL601 resist patterns with a width of 16nm were obtained by an isotropic trimming process in oxygen plasma. This pattern resolution in SAL601 could not be obtained through direct electron beam lithography alone. Using the trimmed electron beam resists, we have successfully fabricated ultra-fine poly-silicon patterns of less than 20nm width. We applied this nanolithography technique to fabricating an ultra-small metal-oxide-semiconductor field-effect-transistor (MOSFET) and revealed that this trimming process is a useful method for nanometer-scale silicon device fabrication.

Original languageEnglish
Pages (from-to)D9281-D9286
JournalMaterials Research Society Symposium-Proceedings
Volume636
Publication statusPublished - 2001 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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