Nanofabrication on Si oxide with scanning tunneling microscope: Mechanism of the low-energy electron-stimulated reaction

Nan Li, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Nanofabrication on Si oxide with a low-energy electron-beam-stimulated reaction has been demonstrated using scanning tunneling microscopy (STM) and the mechanism of the low-energy electron-induced etching is investigated further. Direct fabrication of a thin Ag film with this low-energy e-beam/STM method was also tested, which shows an additional capability of the nanofabrication technique. Nanometer-scale patterning of rings on a thin Si-oxide layer using this method shows that further progress nanolithography can be expected with the fabricated Si oxide as a mask.

Original languageEnglish
Pages (from-to)1621-1623
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number11
DOIs
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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