Nanofabrication of magnetic tunnel junctions by using side-edge thin film deposition

T. Niizeki, H. Kubota, Y. Ando, T. Miyazaki

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Nanostructured double ferromagnetic tunnel junctions (MTJs) are indispensable for investigation of spin-dependent single-electron transport at low temperature. A new fabrication process that enables us to reduce the size of MTJs down to nanometer scale by using the side edge of a patterned film were developed. The multilayers of MTJ partially replaced by thick Al 2O3/Cu double layer were prepared by using electron beam lithography and lift-off, then Pt film was vacuum-evaporated onto the side edge of Al2O3/Cu film, which masked MTJ during following Ar ion milling. As a result, the double MTJs with the dimension of 10nm × 10 μm were formed beneath the Pt film. The large tunnel magnetoresistive ratio of 35% and symmetrical I-V characteristics were obtained at room temperature.

Original languageEnglish
Pages (from-to)347-352
Number of pages6
JournalScience and Technology of Advanced Materials
Volume4
Issue number4
DOIs
Publication statusPublished - 2003 Jul 1

Keywords

  • Magnetic tunnel junction
  • Nanostructure
  • Single-electron tunneling
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Materials Science(all)

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