TY - JOUR
T1 - Nanofabrication of magnetic tunnel junctions by using side-edge thin film deposition
AU - Niizeki, T.
AU - Kubota, H.
AU - Ando, Y.
AU - Miyazaki, T.
N1 - Funding Information:
This study was supported by the IT-program of Research Revolution 2002 (RR2002) ‘Development of Universal Low-Power Spin Memory’, Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, CREST of JST (Japan Science and Technology), and the Mitsubishi Foundation. A part of this work was performed at the clean-room facility of Center for Interdisciplinary Research of Tohoku University.
PY - 2003/7/1
Y1 - 2003/7/1
N2 - Nanostructured double ferromagnetic tunnel junctions (MTJs) are indispensable for investigation of spin-dependent single-electron transport at low temperature. A new fabrication process that enables us to reduce the size of MTJs down to nanometer scale by using the side edge of a patterned film were developed. The multilayers of MTJ partially replaced by thick Al 2O3/Cu double layer were prepared by using electron beam lithography and lift-off, then Pt film was vacuum-evaporated onto the side edge of Al2O3/Cu film, which masked MTJ during following Ar ion milling. As a result, the double MTJs with the dimension of 10nm × 10 μm were formed beneath the Pt film. The large tunnel magnetoresistive ratio of 35% and symmetrical I-V characteristics were obtained at room temperature.
AB - Nanostructured double ferromagnetic tunnel junctions (MTJs) are indispensable for investigation of spin-dependent single-electron transport at low temperature. A new fabrication process that enables us to reduce the size of MTJs down to nanometer scale by using the side edge of a patterned film were developed. The multilayers of MTJ partially replaced by thick Al 2O3/Cu double layer were prepared by using electron beam lithography and lift-off, then Pt film was vacuum-evaporated onto the side edge of Al2O3/Cu film, which masked MTJ during following Ar ion milling. As a result, the double MTJs with the dimension of 10nm × 10 μm were formed beneath the Pt film. The large tunnel magnetoresistive ratio of 35% and symmetrical I-V characteristics were obtained at room temperature.
KW - Magnetic tunnel junction
KW - Nanostructure
KW - Single-electron tunneling
KW - Tunnel magnetoresistance
UR - http://www.scopus.com/inward/record.url?scp=0242657739&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0242657739&partnerID=8YFLogxK
U2 - 10.1016/j.stam.2003.08.004
DO - 10.1016/j.stam.2003.08.004
M3 - Article
AN - SCOPUS:0242657739
VL - 4
SP - 347
EP - 352
JO - Science and Technology of Advanced Materials
JF - Science and Technology of Advanced Materials
SN - 1468-6996
IS - 4
ER -