TY - JOUR
T1 - Nanofabrication of magnetic tunnel junctions by using electron beam lithography
AU - Niizeki, T.
AU - Kubota, H.
AU - Ando, Y.
AU - Miyazaki, T.
N1 - Funding Information:
This study was supported by the IT — program of Research Revolution 2002 (RR2002) “Development of Universal Low-Power Spin Memory”, Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, CREST of JST (Japan Science and Technology), and the Mitsubishi Foundation.
PY - 2004/5
Y1 - 2004/5
N2 - Nanometer-sized ferromagnetic tunnel junctions (MTJs) are suitable to investigate the enhancement of tunnel magnetoresistive effect (TMR) by Coulomb blockade effect. A new fabrication process that enables us to shrink the size of MTJs down to the order of 10nm has been developed. MTJs structured by using this process exhibited large TMR ratio of 38%.
AB - Nanometer-sized ferromagnetic tunnel junctions (MTJs) are suitable to investigate the enhancement of tunnel magnetoresistive effect (TMR) by Coulomb blockade effect. A new fabrication process that enables us to shrink the size of MTJs down to the order of 10nm has been developed. MTJs structured by using this process exhibited large TMR ratio of 38%.
KW - Ferromagnetic tunnel junction
KW - Single-electron tunneling
KW - Tunnel magnetoresistance
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U2 - 10.1016/j.jmmm.2003.12.387
DO - 10.1016/j.jmmm.2003.12.387
M3 - Article
AN - SCOPUS:21044459961
VL - 272-276
SP - 1947
EP - 1948
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - III
ER -