Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width.

Original languageEnglish
Title of host publication2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1709-1711
Number of pages3
ISBN (Electronic)9781728120072
DOIs
Publication statusPublished - 2019 Jun
Event20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII - Berlin, Germany
Duration: 2019 Jun 232019 Jun 27

Publication series

Name2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

Conference

Conference20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Country/TerritoryGermany
CityBerlin
Period19/6/2319/6/27

Keywords

  • Logical gates
  • NAND
  • NOR
  • nanoelectromechanical switches
  • selective chemical vapor deposition

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Spectroscopy
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Instrumentation

Fingerprint

Dive into the research topics of 'Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition'. Together they form a unique fingerprint.

Cite this