Abstract
Actual information data storage was studied using a data storage system based on scanning nonlinear dielectric microscopy. The bit error rates of the data recorded on a LiTaO3 single-crystal medium were evaluated. The data were written at the density of 403 Gbit/in.2 using a conductive-diamond-coated cantilever as a read/write probe. The tendencies of the bit errors were affected by the arrangement of the surrounding data bits. A writing method using bipolar pulses was discussed in order to decrease the bit error rate. The data with the highest recording density, 0.98 Tbit/in. 2, were recorded by using a sharp cantilever. The bit error rate was decreased by a factor of four by adjusting the pulse amplitudes according to the bit arrangements.
Original language | English |
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Pages (from-to) | 2220-2224 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 3 B |
DOIs | |
Publication status | Published - 2006 Mar 27 |
Keywords
- Bit error rate
- Ferroelectric data storage
- LiTaO
- Scanning nonlinear dielectric microscopy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)