Nanodomain manipulation for ferroelectric data storage with high recording density, fast domain switching and low bit error rate

Yoshiomi Hiranaga, Sunao Hashimoto, Nozomi Odagawa, Kenkou Tanaka, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recording density, domain switching time and bit error rate were evaluated using a data storage system based on scanning nonlinear dielectric microscopy. Congruent lithium tantalate single crystals with the thickness less than 50 nm were used as recording media. Local domain switching was carried out by applying voltage pulse on the recording media using a conductive cantilever. Close-packed domain dot arrays were written on the recording media. As a result of optimizing the writing pulse conditions, the dot array with the areal recording density of 10.1 Tbit/inch2 was successfully written. Subsequently, the thickness of recording media was reduced in order to improve the domain switching property, which determines the upper limit of data transfer rate. A nanodomain dot was formed by applying a 500-ps pulse on the 18-nm-thick recording medium. Actual information data were recorded for bit error tests. There were no bit errors in approximately ten-thousand-bit data under the areal recording density of 258 Gbit/inch2. It means bit error rate was less than 1×10-4. Additionally it was also confirmed that actual information data was recorded at the areal recording density of 0.98 Tbit/inch with a few bit errors.

Original languageEnglish
Title of host publication2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF - Sunset Beach, NC, United States
Duration: 2006 Jul 302006 Aug 3

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Other

Other2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
CountryUnited States
CitySunset Beach, NC
Period06/7/3006/8/3

Keywords

  • Domain switching
  • Lithium tantalate
  • Probe memory
  • Scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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