Nanocrystalline silicon film prepared by laser annealing of organosilicon nanocluster

Akira Watanabe; Fusao Hojo; Takao Miwa; Masatoshi Wakagi

doi:10.1143/jjap.41.l378

Nanocrystalline silicon film prepared by laser annealing of organosilicon nanocluster

Akira Watanabe, Fusao Hojo, Takao Miwa, Masatoshi Wakagi

Center for Mineral Processing and Metallurgy (CMPM)

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A novel process for the formation of nanocrystalline silicon film using an organosilicon nanocluster as a precursor was developed. A thin-film coating of the organosilicon nanocluster, soluble in common organic solvents, is preheated and then annealed by an excimer laser to yield a film of nanocrystalline silicon with approximately 10nm in size. The structural changes of the precursor film caused by preheating and excimer laser annealing were investigated by Raman spectroscopy.

Original language	English
Pages (from-to)	L378-L380
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.41.l378
Publication status	Published - 2002 Apr 1

Keywords

Laser annealing
Nanocrystalline silicon
Organosilicon nanocluster
Precursor

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.41.l378

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AU - Wakagi, Masatoshi

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KW - Precursor

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