Abstract
A novel process for the formation of nanocrystalline silicon film using an organosilicon nanocluster as a precursor was developed. A thin-film coating of the organosilicon nanocluster, soluble in common organic solvents, is preheated and then annealed by an excimer laser to yield a film of nanocrystalline silicon with approximately 10nm in size. The structural changes of the precursor film caused by preheating and excimer laser annealing were investigated by Raman spectroscopy.
| Original language | English |
|---|---|
| Pages (from-to) | L378-L380 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 41 |
| Issue number | 4 A |
| DOIs | |
| Publication status | Published - 2002 Apr 1 |
Keywords
- Laser annealing
- Nanocrystalline silicon
- Organosilicon nanocluster
- Precursor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Watanabe, A., Hojo, F., Miwa, T., & Wakagi, M. (2002). Nanocrystalline silicon film prepared by laser annealing of organosilicon nanocluster. Japanese Journal of Applied Physics, Part 2: Letters, 41(4 A), L378-L380. https://doi.org/10.1143/jjap.41.l378