Nanocrystalline silicon film prepared by laser annealing of organosilicon nanocluster

Akira Watanabe, Fusao Hojo, Takao Miwa, Masatoshi Wakagi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A novel process for the formation of nanocrystalline silicon film using an organosilicon nanocluster as a precursor was developed. A thin-film coating of the organosilicon nanocluster, soluble in common organic solvents, is preheated and then annealed by an excimer laser to yield a film of nanocrystalline silicon with approximately 10nm in size. The structural changes of the precursor film caused by preheating and excimer laser annealing were investigated by Raman spectroscopy.

Original languageEnglish
Pages (from-to)L378-L380
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number4 A
DOIs
Publication statusPublished - 2002 Apr 1

Keywords

  • Laser annealing
  • Nanocrystalline silicon
  • Organosilicon nanocluster
  • Precursor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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