Abstract
Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.
Original language | English |
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Pages (from-to) | 446-450 |
Number of pages | 5 |
Journal | Diamond and Related Materials |
Volume | 14 |
Issue number | 3-7 |
DOIs | |
Publication status | Published - 2005 Mar |
Externally published | Yes |
Keywords
- Diamond crystal
- Nanocrystalline diamond
- Plasma CVD
- Synthetic diamond
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering