Nanocrystalline diamond formation by using an inductively coupled radio-frequency CH4/H2/Ar plasma

Reijiro Ikada, Satoru Iizuka

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.

Original languageEnglish
Pages (from-to)446-450
Number of pages5
JournalDiamond and Related Materials
Volume14
Issue number3-7
DOIs
Publication statusPublished - 2005 Mar 1

Keywords

  • Diamond crystal
  • Nanocrystalline diamond
  • Plasma CVD
  • Synthetic diamond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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