Nanocrystalline diamond formation by using an inductively coupled radio-frequency CH4/H2/Ar plasma

Reijiro Ikada; Satoru Iizuka

doi:10.1016/j.diamond.2004.12.035

Nanocrystalline diamond formation by using an inductively coupled radio-frequency CH₄/H₂/Ar plasma

Reijiro Ikada, Satoru Iizuka

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH₄/H₂/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH₄ gas-mixing ratio is important for the formation of nanocrystalline diamonds.

Original language	English
Pages (from-to)	446-450
Number of pages	5
Journal	Diamond and Related Materials
Volume	14
Issue number	3-7
DOIs	https://doi.org/10.1016/j.diamond.2004.12.035
Publication status	Published - 2005 Mar

Keywords

Diamond crystal
Nanocrystalline diamond
Plasma CVD
Synthetic diamond

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.diamond.2004.12.035

Cite this

@article{4e2e64ee63f843b69317fea9a0c41983,

title = "Nanocrystalline diamond formation by using an inductively coupled radio-frequency CH4/H2/Ar plasma",

abstract = "Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.",

keywords = "Diamond crystal, Nanocrystalline diamond, Plasma CVD, Synthetic diamond",

author = "Reijiro Ikada and Satoru Iizuka",

note = "Funding Information: The authors are indebted to Dr. T. Abe for the film analysis. The work was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2005",

month = mar,

doi = "10.1016/j.diamond.2004.12.035",

language = "English",

volume = "14",

pages = "446--450",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-7",

}

TY - JOUR

T1 - Nanocrystalline diamond formation by using an inductively coupled radio-frequency CH4/H2/Ar plasma

AU - Ikada, Reijiro

AU - Iizuka, Satoru

N1 - Funding Information: The authors are indebted to Dr. T. Abe for the film analysis. The work was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2005/3

Y1 - 2005/3

N2 - Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.

AB - Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.

KW - Diamond crystal

KW - Nanocrystalline diamond

KW - Plasma CVD

KW - Synthetic diamond

UR - http://www.scopus.com/inward/record.url?scp=18444378747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18444378747&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2004.12.035

DO - 10.1016/j.diamond.2004.12.035

M3 - Article

AN - SCOPUS:18444378747

VL - 14

SP - 446

EP - 450

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-7

ER -