Nanocrystalline diamond deposition in electron-temperature-controlled CH4/H2/Ar plasma

Reijiro Ikada, Kohgi Kato, Toshimi Abe, Satoru Iizuka

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Nanocrystalline diamond deposition is investigated under a control of electron temperature in CH4/H2/Ar plasma produced by inductively coupled rf discharge. A grid-biasing method is employed for the control of electron temperature Te. When Te in the processing region is ∼ 2 eV, simple graphite has been deposited. On the other hand, nanocrystalline diamond has been prepared in case of low electron temperature (∼ 0.3-0.5 eV) plasma when CH4 mixing ratio is very low (∼ 0.02). With increasing CH4 mixing ratio, the film property is changed from nanocrystalline diamond to diamond-like carbon.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalThin Solid Films
Volume506-507
DOIs
Publication statusPublished - 2006 May 26

Keywords

  • Electron temperature
  • Grid bias method
  • Inductively coupled rf plasma
  • Nanocrystalline diamond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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