Abstract
Nanocrystalline diamond deposition is investigated under a control of electron temperature in CH4/H2/Ar plasma produced by inductively coupled rf discharge. A grid-biasing method is employed for the control of electron temperature Te. When Te in the processing region is ∼ 2 eV, simple graphite has been deposited. On the other hand, nanocrystalline diamond has been prepared in case of low electron temperature (∼ 0.3-0.5 eV) plasma when CH4 mixing ratio is very low (∼ 0.02). With increasing CH4 mixing ratio, the film property is changed from nanocrystalline diamond to diamond-like carbon.
Original language | English |
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Pages (from-to) | 73-76 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 506-507 |
DOIs | |
Publication status | Published - 2006 May 26 |
Keywords
- Electron temperature
- Grid bias method
- Inductively coupled rf plasma
- Nanocrystalline diamond
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry