Nanocrystalline diamond deposition in electron-temperature-controlled CH4/H2/Ar plasma

Reijiro Ikada; Kohgi Kato; Toshimi Abe; Satoru Iizuka

doi:10.1016/j.tsf.2005.08.085

Nanocrystalline diamond deposition in electron-temperature-controlled CH₄/H₂/Ar plasma

Reijiro Ikada, Kohgi Kato, Toshimi Abe, Satoru Iizuka

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Nanocrystalline diamond deposition is investigated under a control of electron temperature in CH₄/H₂/Ar plasma produced by inductively coupled rf discharge. A grid-biasing method is employed for the control of electron temperature T_e. When T_e in the processing region is ∼ 2 eV, simple graphite has been deposited. On the other hand, nanocrystalline diamond has been prepared in case of low electron temperature (∼ 0.3-0.5 eV) plasma when CH₄ mixing ratio is very low (∼ 0.02). With increasing CH₄ mixing ratio, the film property is changed from nanocrystalline diamond to diamond-like carbon.

Original language	English
Pages (from-to)	73-76
Number of pages	4
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.085
Publication status	Published - 2006 May 26

Keywords

Electron temperature
Grid bias method
Inductively coupled rf plasma
Nanocrystalline diamond

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.08.085

Cite this

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title = "Nanocrystalline diamond deposition in electron-temperature-controlled CH4/H2/Ar plasma",

abstract = "Nanocrystalline diamond deposition is investigated under a control of electron temperature in CH4/H2/Ar plasma produced by inductively coupled rf discharge. A grid-biasing method is employed for the control of electron temperature Te. When Te in the processing region is ∼ 2 eV, simple graphite has been deposited. On the other hand, nanocrystalline diamond has been prepared in case of low electron temperature (∼ 0.3-0.5 eV) plasma when CH4 mixing ratio is very low (∼ 0.02). With increasing CH4 mixing ratio, the film property is changed from nanocrystalline diamond to diamond-like carbon.",

keywords = "Electron temperature, Grid bias method, Inductively coupled rf plasma, Nanocrystalline diamond",

author = "Reijiro Ikada and Kohgi Kato and Toshimi Abe and Satoru Iizuka",

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doi = "10.1016/j.tsf.2005.08.085",

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TY - JOUR

T1 - Nanocrystalline diamond deposition in electron-temperature-controlled CH4/H2/Ar plasma

AU - Ikada, Reijiro

AU - Kato, Kohgi

AU - Abe, Toshimi

AU - Iizuka, Satoru

PY - 2006/5/26

Y1 - 2006/5/26

N2 - Nanocrystalline diamond deposition is investigated under a control of electron temperature in CH4/H2/Ar plasma produced by inductively coupled rf discharge. A grid-biasing method is employed for the control of electron temperature Te. When Te in the processing region is ∼ 2 eV, simple graphite has been deposited. On the other hand, nanocrystalline diamond has been prepared in case of low electron temperature (∼ 0.3-0.5 eV) plasma when CH4 mixing ratio is very low (∼ 0.02). With increasing CH4 mixing ratio, the film property is changed from nanocrystalline diamond to diamond-like carbon.

AB - Nanocrystalline diamond deposition is investigated under a control of electron temperature in CH4/H2/Ar plasma produced by inductively coupled rf discharge. A grid-biasing method is employed for the control of electron temperature Te. When Te in the processing region is ∼ 2 eV, simple graphite has been deposited. On the other hand, nanocrystalline diamond has been prepared in case of low electron temperature (∼ 0.3-0.5 eV) plasma when CH4 mixing ratio is very low (∼ 0.02). With increasing CH4 mixing ratio, the film property is changed from nanocrystalline diamond to diamond-like carbon.

KW - Electron temperature

KW - Grid bias method

KW - Inductively coupled rf plasma

KW - Nanocrystalline diamond

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