As a result of aggressive scaling of CMOS (Complementary Metal-Oxide-Semiconductor) transistors, the thickness of the gate insulator is approaching atomic dimensions. In advanced CMOS with such ultrathin dielectric films, atomic-scale phenomena play an important role in performance and reliability. Simulation is a powerful tool for investigating and understanding atomic scale phenomena. We investigated the electronic properties of the Si(100)/SiO2 interface with the first-principles molecular dynamics method. The behavior and the electronic properties of the defect, hydrogen, and nitrogen atoms at the interface, which have a serious influence on the electronic properties of the insulating film, were also investigated. We also simulated the annealing behavior of aluminates and silicates of Hf and Zr, which are candidates for the high-dielectric-constant gate dielectric materials of future CMOS, by employing the classical molecular dynamics method. From the results of our simulation, we can obtain a guideline to control the gate dielectric materials and the interfaces with the Si substrate.
|Number of pages||13|
|Journal||Fujitsu Scientific and Technical Journal|
|Publication status||Published - 2003 Aug 18|
ASJC Scopus subject areas
- Human-Computer Interaction
- Hardware and Architecture
- Electrical and Electronic Engineering