Nano-scale characterization of poly-Si gate on high-k gate stack structures by scanning photoemission microscopy*

S. Toyoda, Y. Nakamura, K. Horiba, H. Kumigashira, M. Oshima, K. Amemiya

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated poly-Si gate pattern on HfO2/SiO 2/Si stack structures by scanning photoemission microscopy using synchrotron radiation. Gate-pattern images have been successfully obtained by scanning the sample position during acquisitions of core-level photoemission spectra. Si 2p, Hf 4f, and O 1s core-level spectra systematically change for different sample positions, which suggests that light source focused by the zone plate is effectively utilized for nano-scale characterization of chemical states in device-pattern structures. We have also demonstrated that etching velocities of HfO2 films on a Si substrate and shallow trench isolation vary when exposing the poly-Si gate pattern to dry etching processes.

Original languageEnglish
Pages (from-to)224-227
Number of pages4
Journale-Journal of Surface Science and Nanotechnology
Volume9
DOIs
Publication statusPublished - 2011 May 21
Externally publishedYes

Keywords

  • High-k gate stack; Poly-Si; Scanning photoemission microscopy

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Nano-scale characterization of poly-Si gate on high-k gate stack structures by scanning photoemission microscopy*'. Together they form a unique fingerprint.

  • Cite this