TY - GEN
T1 - Nano Ni/Cu-TSVs with an Improved Reliability for 3D-IC Integration Application
AU - Murugesan, M.
AU - Mori, K.
AU - Kojima, T.
AU - Hashimoto, H.
AU - Bea, J. C.
AU - Fukushima, T.
AU - Koyanagi, M.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - Two of the major reliability issues in threedimensional (3D)-LSIs namely the back-metal contamination (i.e. diffusion of Cu into active Si during the BEOL processes), and the thermo-mechanical stress associated with through-Si-via (TSV) were meticulously studied for Ni/Cu nano-TSVs for their application in 3D-IC integration. A very good barrier ability against Cu-diffusion for Ni seed layer was confirmed from the stable C dd and the absence of metal impurities in the underneath dielectric layer and beyond by respectively the capacitance-voltage analysis and the secondary ion mass spectroscopy, even after annealing at 300 °C. Further, a cluster of 36 Ni/Cu nano-TSVs having the width value of 500 nm spreading over 70 μm2 area did not induce any additional thermo-mechanical stress in the vicinal Si after annealing at 300°C, whereas the conventional 5 pm-width Cu-TSVs over a similar area have induced >300 MPa of compressive stress after annealing.
AB - Two of the major reliability issues in threedimensional (3D)-LSIs namely the back-metal contamination (i.e. diffusion of Cu into active Si during the BEOL processes), and the thermo-mechanical stress associated with through-Si-via (TSV) were meticulously studied for Ni/Cu nano-TSVs for their application in 3D-IC integration. A very good barrier ability against Cu-diffusion for Ni seed layer was confirmed from the stable C dd and the absence of metal impurities in the underneath dielectric layer and beyond by respectively the capacitance-voltage analysis and the secondary ion mass spectroscopy, even after annealing at 300 °C. Further, a cluster of 36 Ni/Cu nano-TSVs having the width value of 500 nm spreading over 70 μm2 area did not induce any additional thermo-mechanical stress in the vicinal Si after annealing at 300°C, whereas the conventional 5 pm-width Cu-TSVs over a similar area have induced >300 MPa of compressive stress after annealing.
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U2 - 10.1109/ASMC49169.2020.9185397
DO - 10.1109/ASMC49169.2020.9185397
M3 - Conference contribution
AN - SCOPUS:85090278350
T3 - ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
BT - 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2020
Y2 - 24 August 2020 through 26 August 2020
ER -