Nano Ni/Cu-TSVs with an Improved Reliability for 3D-IC Integration Application

M. Murugesan, K. Mori, T. Kojima, H. Hashimoto, J. C. Bea, T. Fukushima, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two of the major reliability issues in threedimensional (3D)-LSIs namely the back-metal contamination (i.e. diffusion of Cu into active Si during the BEOL processes), and the thermo-mechanical stress associated with through-Si-via (TSV) were meticulously studied for Ni/Cu nano-TSVs for their application in 3D-IC integration. A very good barrier ability against Cu-diffusion for Ni seed layer was confirmed from the stable C dd and the absence of metal impurities in the underneath dielectric layer and beyond by respectively the capacitance-voltage analysis and the secondary ion mass spectroscopy, even after annealing at 300 °C. Further, a cluster of 36 Ni/Cu nano-TSVs having the width value of 500 nm spreading over 70 μm2 area did not induce any additional thermo-mechanical stress in the vicinal Si after annealing at 300°C, whereas the conventional 5 pm-width Cu-TSVs over a similar area have induced >300 MPa of compressive stress after annealing.

Original languageEnglish
Title of host publication2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728158761
DOIs
Publication statusPublished - 2020 Aug
Event31st Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2020 - Saratoga Springs, United States
Duration: 2020 Aug 242020 Aug 26

Publication series

NameASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
Volume2020-August
ISSN (Print)1078-8743

Conference

Conference31st Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2020
CountryUnited States
CitySaratoga Springs
Period20/8/2420/8/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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