Nano-grating channel MOSFETs for improved current drivability

Takashi Ito, Shin Ichiro Kuroki, Koji Kotani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Drivability-improved MOSFETs were successfully fabricated using nano-grating silicon wafers. Effective channel widths were universally increased with the wafers. This required almost no additional process change for device fabrication when the grating height was less than or comparable to the conventional macroscopic wafer surface roughness. The fabricated MOSFET with the grating height of 25nm showed 22% improvement in current drivability compared to the conventional structure. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationSolid-State Joint Posters (General)
Pages83-89
Number of pages7
Edition10
DOIs
Publication statusPublished - 2007 Dec 1
Event209th ECS Meeting - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number10
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other209th ECS Meeting
CountryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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