A nanometer Electron Beam (EB) lithography system has been developed and used for fabricating nanometer order MOSFETs. The system uses a Zr/O/W Thermal Field Emitter (TFE) and has a 5 nm-diameter beam at a current of 100 pA, an acceleration voltage of 50 kV. A 10 nm line was successfully delineated in PMMA (Polymethyl Methacrylate) on a thick Si substrate. A chemically amplified negative resist was used as a single layer mask for minute MOSFET gate fabrication, and showed high resolution less than 0.1, μm width. Proximity effect correction was applied to the gate lithography, resulting in excellent line width control even less than 0.1 μm. Operation of a 40 nm-polysilicon gate nMOSFET was confirmed.
|Number of pages||9|
|Journal||NEC Research and Development|
|Publication status||Published - 1996 Dec 1|
- Dry etching
- Electron Beam (EB) lithography
ASJC Scopus subject areas
- Electrical and Electronic Engineering