Na-Si binary phase diagram and solution growth of silicon crystals

Haruhiko Morito; Takahiro Yamada; T. Ikeda; Hisanori Yamane

doi:10.1016/j.jallcom.2009.02.036

Na-Si binary phase diagram and solution growth of silicon crystals

Haruhiko Morito, Takahiro Yamada, T. Ikeda, Hisanori Yamane

Materials Property Division

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

In the present study, a Na-Si binary phase diagram was first presented from the results of differential thermal analysis and X-ray diffraction. Based on the phase diagram, we performed low-temperature formation of single crystals, film and porous bulk of Si by vaporizing Na from a Na-Si melt at 800 or 900 °C.

Original language	English
Pages (from-to)	723-726
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	480
Issue number	2
DOIs	https://doi.org/10.1016/j.jallcom.2009.02.036
Publication status	Published - 2009 Jul 8

Keywords

Crystal growth
Phase diagrams

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2009.02.036

Cite this

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title = "Na-Si binary phase diagram and solution growth of silicon crystals",

abstract = "In the present study, a Na-Si binary phase diagram was first presented from the results of differential thermal analysis and X-ray diffraction. Based on the phase diagram, we performed low-temperature formation of single crystals, film and porous bulk of Si by vaporizing Na from a Na-Si melt at 800 or 900 °C.",

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author = "Haruhiko Morito and Takahiro Yamada and T. Ikeda and Hisanori Yamane",

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AU - Morito, Haruhiko

AU - Yamada, Takahiro

AU - Ikeda, T.

AU - Yamane, Hisanori

PY - 2009/7/8

Y1 - 2009/7/8

N2 - In the present study, a Na-Si binary phase diagram was first presented from the results of differential thermal analysis and X-ray diffraction. Based on the phase diagram, we performed low-temperature formation of single crystals, film and porous bulk of Si by vaporizing Na from a Na-Si melt at 800 or 900 °C.

AB - In the present study, a Na-Si binary phase diagram was first presented from the results of differential thermal analysis and X-ray diffraction. Based on the phase diagram, we performed low-temperature formation of single crystals, film and porous bulk of Si by vaporizing Na from a Na-Si melt at 800 or 900 °C.

KW - Crystal growth

KW - Phase diagrams

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JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

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ER -

Na-Si binary phase diagram and solution growth of silicon crystals

Abstract

Keywords

ASJC Scopus subject areas

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