Na flux growth and characterization of GaN single crystals

H. Yamane, M. Shimada, F. J. DiSalvo

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Bulk GaN single crystals with a size of 1-2 mm were prepared using Na flux at 600-800 °C. Morphology of the crystals were platelet or prismatic. Polarity of the crystals was determined by x-ray single crystal analysis using X-ray anomalous dispersion. Hall measurement was carried out for orange color platelet crystals. The crystals were n-type semiconductor with the electron concentration of about 1020 cm-3 and mobility of 10-100 cm2v-2s-1 at room temperature. The near-edge emission of GaN was observed at 363 nm in the cathodoluminescence spectra of the colorless prismatic single crystals.

Original languageEnglish
Pages (from-to)21-24
Number of pages4
JournalMaterials Science Forum
Volume325
DOIs
Publication statusPublished - 2000
EventProceedings of the 1998 2nd International Symposium on Nitrides - Limerick, Ireland
Duration: 1998 Jun 91998 Jun 11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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