n-type ZnSe crystal growth by MOVPE under atmospheric pressure with UV irradiation on stoichiometry-controlled p-type ZnSe crystals

F. Sakurai, K. Suto, Yutaka Oyama, J. Nishizawa

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

MOVPE growth under atmospheric pressure of low-resistivity n-type ZnSe layers on stoichiometry-controlled p-type ZnSe substrates was carried out using diethylzinc as a Zn source, diethylselenide as a Se source, and ethyliodide for iodine doping. The growth of the ZnSe single-crystal layers with high carrier concentration can be attained under UV irradiation condition and the condition that the source gas flow rate is within a limited region. The activation ratio of iodine atoms is higher than 0.87, at a carrier concentration ranging from 2 × 1017 to 8 × 1018 cm-3. The full-width at half-maximum of the rocking curve of X-ray diffraction indicates the high quality of the doped epitaxial layers grown on the ZnSe substrates compared to those grown on GaAs substrates.

Original languageEnglish
Pages (from-to)537-541
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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