n-type ZnSe crystal growth by MOVPE under atmospheric pressure with UV irradiation on stoichiometry-controlled p-type ZnSe crystals

MOVPE growth under atmospheric pressure of low-resistivity n-type ZnSe layers on stoichiometry-controlled p-type ZnSe substrates was carried out using diethylzinc as a Zn source, diethylselenide as a Se source, and ethyliodide for iodine doping. The growth of the ZnSe single-crystal layers with high carrier concentration can be attained under UV irradiation condition and the condition that the source gas flow rate is within a limited region. The activation ratio of iodine atoms is higher than 0.87, at a carrier concentration ranging from 2 × 10¹⁷ to 8 × 10¹⁸ cm^-3. The full-width at half-maximum of the rocking curve of X-ray diffraction indicates the high quality of the doped epitaxial layers grown on the ZnSe substrates compared to those grown on GaAs substrates.