TY - JOUR
T1 - N -type electrical conduction in SnS thin films
AU - Suzuki, Issei
AU - Kawanishi, Sakiko
AU - Bauers, Sage R.
AU - Zakutayev, Andriy
AU - Lin, Zexin
AU - Tsukuda, Satoshi
AU - Shibata, Hiroyuki
AU - Kim, Minseok
AU - Yanagi, Hiroshi
AU - Omata, Takahisa
N1 - Funding Information:
The authors thank Profs. Chichibu and Shima at Tohoku University for their help with the Hall measurement equipment. The authors are deeply grateful to Ms. Shishido and Mr. Magara at Tohoku University for their professional technical support in the TOF-SIMS analysis. This paper resulted from the collaboration between Tohoku University, the University of Yamanashi, and National Renewable Energy Laboratory (NREL) under the support of Fostering Joint International Research (B) (Grant No. 18KK0133). The chalcogenide synthesis facility at NREL is funded by the Liquid Sunlight Alliance, which is supported by the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Fuels from Sunlight Hub under Award No. DE-SC0021266. NREL is operated by Alliance for Sustainable Energy, LLC, for the DOE under Contract No. DE-AC36-08GO28308. This paper was also partly supported by a Grant-in-Aid for Scientific Research (B) (Grant No. 19H02430), the Murata Science Foundation, IMRAM project funding, and the Research Program of “Five-star Alliance” in “NJRC Mater. & Dev.” The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.
Publisher Copyright:
© 2021 authors. Published by the American Physical Society.
PY - 2021/12
Y1 - 2021/12
N2 - Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result, n-type SnS thin films have never been obtained. In this paper, we realize n-type conduction in SnS thin films by using radiofrequency-magnetron sputtering with Cl doping and a sulfur plasma source during deposition. Here, n-type SnS thin films are obtained at all the substrate temperatures employed in this paper (221-341 °C), exhibiting carrier concentrations and Hall mobilities of ∼2×1018cm-3 and 0.1-1cm2V-1s-1, respectively. The films prepared without a sulfur plasma source, on the other hand, exhibit p-type conduction despite containing a comparable amount of Cl donors. This is likely due to a significant number of acceptor-type defects originating from sulfur deficiency in p-type films, which appears as a broad optical absorption within the band gap. We demonstrate n-type SnS thin films in this paper for the realization of SnS homojunction solar cells, which are expected to have a higher conversion efficiency than the conventional heterojunction SnS solar cells.
AB - Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result, n-type SnS thin films have never been obtained. In this paper, we realize n-type conduction in SnS thin films by using radiofrequency-magnetron sputtering with Cl doping and a sulfur plasma source during deposition. Here, n-type SnS thin films are obtained at all the substrate temperatures employed in this paper (221-341 °C), exhibiting carrier concentrations and Hall mobilities of ∼2×1018cm-3 and 0.1-1cm2V-1s-1, respectively. The films prepared without a sulfur plasma source, on the other hand, exhibit p-type conduction despite containing a comparable amount of Cl donors. This is likely due to a significant number of acceptor-type defects originating from sulfur deficiency in p-type films, which appears as a broad optical absorption within the band gap. We demonstrate n-type SnS thin films in this paper for the realization of SnS homojunction solar cells, which are expected to have a higher conversion efficiency than the conventional heterojunction SnS solar cells.
UR - http://www.scopus.com/inward/record.url?scp=85121613890&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85121613890&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.5.125405
DO - 10.1103/PhysRevMaterials.5.125405
M3 - Article
AN - SCOPUS:85121613890
SN - 2475-9953
VL - 5
JO - Physical Review Materials
JF - Physical Review Materials
IS - 12
M1 - 125405
ER -