TY - JOUR
T1 - n-type and p-type double-walled carbon nanotube field-effect transistors based on charge-transfer modulation
AU - Li, Y. F.
AU - Hatakeyama, R.
AU - Kaneko, T.
PY - 2007/9/1
Y1 - 2007/9/1
N2 - Electrical transport properties of double-walled carbon nanotubes (DWNTs) are modulated by encapsulating alkali-metal Cs atom or C60 molecules via a plasma ion-irradiation method. The pristine DWNTs are found to exhibit ambipolar semiconducting behavior due to their small bandgap. In contrast, Cs and C60 encapsulated DWNTs exhibit high performance unipolar n-type and p-type semiconducting behavior since they can operate as an electron donor and acceptor, respectively. Moreover, by controlling the filling level, p-n junction is found to be formed in DWNTs by Cs encapsulation. Our results indicate that DWNTs have great potential as building blocks for various electronic nano devices.
AB - Electrical transport properties of double-walled carbon nanotubes (DWNTs) are modulated by encapsulating alkali-metal Cs atom or C60 molecules via a plasma ion-irradiation method. The pristine DWNTs are found to exhibit ambipolar semiconducting behavior due to their small bandgap. In contrast, Cs and C60 encapsulated DWNTs exhibit high performance unipolar n-type and p-type semiconducting behavior since they can operate as an electron donor and acceptor, respectively. Moreover, by controlling the filling level, p-n junction is found to be formed in DWNTs by Cs encapsulation. Our results indicate that DWNTs have great potential as building blocks for various electronic nano devices.
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U2 - 10.1007/s00339-007-4061-2
DO - 10.1007/s00339-007-4061-2
M3 - Article
AN - SCOPUS:34547305708
VL - 88
SP - 745
EP - 749
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 4
ER -