N-plasma assisted molecular beam epitaxy of GaN(0001̄) thin films on 6H-SiC(0001̄)

Qi Zhen Xue; Qi Kun Xue; Satoko Kuwano; Koji Nakayama; Toshio Sakurai

doi:10.1143/jjap.40.4388

N-plasma assisted molecular beam epitaxy of GaN(0001̄) thin films on 6H-SiC(0001̄)

Qi Zhen Xue, Qi Kun Xue, Satoko Kuwano, Koji Nakayama, Toshio Sakurai

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

On the atomically flat C-face 6H-SiC surface prepared by ultra high vacuum Si-etching, two-dimensional growth of GaN (0001̄) thin films is observed with an A1N buffer layer using N-plasma assisted molecular beam epitaxy. Scanning tunneling microscopy measurements reveal a series of Ga-stabilized reconstructions, which are consistent with the surface phases reported for the GaN (0001̄) film, but are different from that of the GaN(0001) surface. The result agrees with the polarity assignment of the heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, that is, a GaN film grown on SiC(0001̄) is (0001̄) oriented (N-face) while that on SiC(0001) is (0001) oriented (Ga-face).

Original language	English
Pages (from-to)	4388-4390
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	6 B
DOIs	https://doi.org/10.1143/jjap.40.4388
Publication status	Published - 2001 Jun
Externally published	Yes

Keywords

Film polarity
Gallium nitride
Molecular beam epitaxy
Scanning tunneling microscopy
Silicon carbide
Surface reconstruction

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "N-plasma assisted molecular beam epitaxy of GaN(000{\=1}) thin films on 6H-SiC(000{\=1})",

abstract = "On the atomically flat C-face 6H-SiC surface prepared by ultra high vacuum Si-etching, two-dimensional growth of GaN (000{\=1}) thin films is observed with an A1N buffer layer using N-plasma assisted molecular beam epitaxy. Scanning tunneling microscopy measurements reveal a series of Ga-stabilized reconstructions, which are consistent with the surface phases reported for the GaN (000{\=1}) film, but are different from that of the GaN(0001) surface. The result agrees with the polarity assignment of the heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, that is, a GaN film grown on SiC(000{\=1}) is (000{\=1}) oriented (N-face) while that on SiC(0001) is (0001) oriented (Ga-face).",

keywords = "Film polarity, Gallium nitride, Molecular beam epitaxy, Scanning tunneling microscopy, Silicon carbide, Surface reconstruction",

author = "Xue, {Qi Zhen} and Xue, {Qi Kun} and Satoko Kuwano and Koji Nakayama and Toshio Sakurai",

year = "2001",

month = jun,

doi = "10.1143/jjap.40.4388",

language = "English",

volume = "40",

pages = "4388--4390",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 B",

}

TY - JOUR

T1 - N-plasma assisted molecular beam epitaxy of GaN(0001̄) thin films on 6H-SiC(0001̄)

AU - Xue, Qi Zhen

AU - Xue, Qi Kun

AU - Kuwano, Satoko

AU - Nakayama, Koji

AU - Sakurai, Toshio

PY - 2001/6

Y1 - 2001/6

N2 - On the atomically flat C-face 6H-SiC surface prepared by ultra high vacuum Si-etching, two-dimensional growth of GaN (0001̄) thin films is observed with an A1N buffer layer using N-plasma assisted molecular beam epitaxy. Scanning tunneling microscopy measurements reveal a series of Ga-stabilized reconstructions, which are consistent with the surface phases reported for the GaN (0001̄) film, but are different from that of the GaN(0001) surface. The result agrees with the polarity assignment of the heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, that is, a GaN film grown on SiC(0001̄) is (0001̄) oriented (N-face) while that on SiC(0001) is (0001) oriented (Ga-face).

AB - On the atomically flat C-face 6H-SiC surface prepared by ultra high vacuum Si-etching, two-dimensional growth of GaN (0001̄) thin films is observed with an A1N buffer layer using N-plasma assisted molecular beam epitaxy. Scanning tunneling microscopy measurements reveal a series of Ga-stabilized reconstructions, which are consistent with the surface phases reported for the GaN (0001̄) film, but are different from that of the GaN(0001) surface. The result agrees with the polarity assignment of the heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, that is, a GaN film grown on SiC(0001̄) is (0001̄) oriented (N-face) while that on SiC(0001) is (0001) oriented (Ga-face).

KW - Film polarity

KW - Gallium nitride

KW - Molecular beam epitaxy

KW - Scanning tunneling microscopy

KW - Silicon carbide

KW - Surface reconstruction

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DO - 10.1143/jjap.40.4388

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EP - 4390

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 6 B

ER -

N-plasma assisted molecular beam epitaxy of GaN(0001̄) thin films on 6H-SiC(0001̄)

Abstract

Keywords

ASJC Scopus subject areas

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