N-plasma assisted molecular beam epitaxy of GaN(0001̄) thin films on 6H-SiC(0001̄)

Qi Zhen Xue, Qi Kun Xue, Satoko Kuwano, Koji Nakayama, Toshio Sakurai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


On the atomically flat C-face 6H-SiC surface prepared by ultra high vacuum Si-etching, two-dimensional growth of GaN (0001̄) thin films is observed with an A1N buffer layer using N-plasma assisted molecular beam epitaxy. Scanning tunneling microscopy measurements reveal a series of Ga-stabilized reconstructions, which are consistent with the surface phases reported for the GaN (0001̄) film, but are different from that of the GaN(0001) surface. The result agrees with the polarity assignment of the heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, that is, a GaN film grown on SiC(0001̄) is (0001̄) oriented (N-face) while that on SiC(0001) is (0001) oriented (Ga-face).

Original languageEnglish
Pages (from-to)4388-4390
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 B
Publication statusPublished - 2001 Jun
Externally publishedYes


  • Film polarity
  • Gallium nitride
  • Molecular beam epitaxy
  • Scanning tunneling microscopy
  • Silicon carbide
  • Surface reconstruction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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