N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

T. Kanbara; K. Shibata; S. Fujiki; Y. Kubozono; S. Kashino; T. Urisu; M. Sakai; A. Fujiwara; Ryotaro Kumashiro; Katsumi Tanigaki

doi:10.1016/j.cplett.2003.07.025

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

T. Kanbara, K. Shibata, S. Fujiki, Y. Kubozono, S. Kashino, T. Urisu, M. Sakai, A. Fujiwara, Ryotaro Kumashiro, Katsumi Tanigaki

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

N-channel field effect transistors (FETs) were fabricated with thin films of C ₆₀ and Dy@C ₈₂ . A typical enhancement-type FET property was observed in C ₆₀ FET above 220 K. The mobility of C ₆₀ FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C ₈₂ FET was found to be a normally-on type FET, which has a property different from that for C ₆₀ and C ₇₀ FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C ₆₀ and pentacene thin-film FETs.

Original language	English
Pages (from-to)	223-229
Number of pages	7
Journal	Chemical Physics Letters
Volume	379
Issue number	3-4
DOIs	https://doi.org/10.1016/j.cplett.2003.07.025
Publication status	Published - 2003 Sep 26

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit. / Kanbara, T.; Shibata, K.; Fujiki, S.; Kubozono, Y.; Kashino, S.; Urisu, T.; Sakai, M.; Fujiwara, A.; Kumashiro, Ryotaro; Tanigaki, Katsumi.

In: Chemical Physics Letters, Vol. 379, No. 3-4, 26.09.2003, p. 223-229.

Research output: Contribution to journal › Article › peer-review

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abstract = " N-channel field effect transistors (FETs) were fabricated with thin films of C 60 and Dy@C 82 . A typical enhancement-type FET property was observed in C 60 FET above 220 K. The mobility of C 60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C 82 FET was found to be a normally-on type FET, which has a property different from that for C 60 and C 70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C 60 and pentacene thin-film FETs.",

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AU - Kanbara, T.

AU - Shibata, K.

AU - Fujiki, S.

AU - Kubozono, Y.

AU - Kashino, S.

AU - Urisu, T.

AU - Sakai, M.

AU - Fujiwara, A.

AU - Kumashiro, Ryotaro

AU - Tanigaki, Katsumi

PY - 2003/9/26

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AB - N-channel field effect transistors (FETs) were fabricated with thin films of C 60 and Dy@C 82 . A typical enhancement-type FET property was observed in C 60 FET above 220 K. The mobility of C 60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C 82 FET was found to be a normally-on type FET, which has a property different from that for C 60 and C 70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C 60 and pentacene thin-film FETs.

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