N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

T. Kanbara; K. Shibata; S. Fujiki; Y. Kubozono; S. Kashino; T. Urisu; M. Sakai; A. Fujiwara; R. Kumashiro; K. Tanigaki

doi:10.1016/j.cplett.2003.07.025

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

T. Kanbara, K. Shibata, S. Fujiki, Y. Kubozono, S. Kashino, T. Urisu, M. Sakai, A. Fujiwara, R. Kumashiro, K. Tanigaki

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

N-channel field effect transistors (FETs) were fabricated with thin films of C₆₀ and Dy@C₈₂. A typical enhancement-type FET property was observed in C₆₀ FET above 220 K. The mobility of C ₆₀ FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C₈₂ FET was found to be a normally-on type FET, which has a property different from that for C₆₀ and C₇₀ FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C₆₀ and pentacene thin-film FETs.

Original language	English
Pages (from-to)	223-229
Number of pages	7
Journal	Chemical Physics Letters
Volume	379
Issue number	3-4
DOIs	https://doi.org/10.1016/j.cplett.2003.07.025
Publication status	Published - 2003 Sep 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2003.07.025

Cite this

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title = "N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit",

abstract = "N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C 60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs.",

author = "T. Kanbara and K. Shibata and S. Fujiki and Y. Kubozono and S. Kashino and T. Urisu and M. Sakai and A. Fujiwara and R. Kumashiro and K. Tanigaki",

note = "Funding Information: This work has been supported by the Joint Studies Program (2001–2002) of the Institute for Molecular Science. The authors appreciate financial support from CREST of Japan Science and Technology Corporation.",

year = "2003",

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doi = "10.1016/j.cplett.2003.07.025",

language = "English",

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journal = "Chemical Physics Letters",

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T1 - N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

AU - Kanbara, T.

AU - Shibata, K.

AU - Fujiki, S.

AU - Kubozono, Y.

AU - Kashino, S.

AU - Urisu, T.

AU - Sakai, M.

AU - Fujiwara, A.

AU - Kumashiro, R.

AU - Tanigaki, K.

N1 - Funding Information: This work has been supported by the Joint Studies Program (2001–2002) of the Institute for Molecular Science. The authors appreciate financial support from CREST of Japan Science and Technology Corporation.

PY - 2003/9/26

Y1 - 2003/9/26

N2 - N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C 60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs.

AB - N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C 60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs.

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JO - Chemical Physics Letters

JF - Chemical Physics Letters

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IS - 3-4

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N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

Abstract

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