N- and p-type in-plane gated field effect transistors directly written on a semi-insulating GaAs substrate

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Abstract

A new type in-plane gated field effect transistor where the semi-insulating substrate itself is used as a gate insulator region is proposed. n- and p-type in-plane gated field effect transistors are fabricated on a semi-insulating GaAs substrate by focused ion beam scanning of Si++ and Be++, respectively. These in-plane gated field effect transistors are found to operate well at room temperature.

Original languageEnglish
Pages (from-to)1667-1669
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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