Mysterious material InN in nitride semiconductors - What's the bandgap energy and its application?

Takashi Matsuoka, Masashi Nakao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The progress in nitride semiconductors is reviewed. The current status in the growth and characteristics of InN, which remains the most mysterious compound, is reviewed. The phase diagram for InN growths the optical absorption characteristic, polarity, temperature dependence of photoluminescence, future prospects are described. The application of InN for light emitting devices is discussed.

Original languageEnglish
Title of host publicationIPRM'07
Subtitle of host publicationIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages372-375
Number of pages4
DOIs
Publication statusPublished - 2007 Oct 2
EventIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
Duration: 2007 May 142007 May 18

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
CountryJapan
CityMatsue
Period07/5/1407/5/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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