Muonium defect states and ionization energies in SiGe alloys

P. J.C. King, R. L. Lichti, B. R. Carroll, Y. G. Celebi, K. H. Chow, I. Yonenaga

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The determination of hydrogen energy levels in semiconducting materials is important owing to the ability of hydrogen impurity to either compensate dopant activity in some materials or to act as a dopant itself in others. Although direct observation of hydrogen levels is difficult owing to its high mobility and reactivity, data can be provided using the hydrogen analog muonium, formed by implantation of positive muons. We present here muonium studies of bulk Si1-xGex alloys aimed at extraction of hydrogen energy levels within this system. A simple band alignment model predicts the behavior of donor and acceptor muonium species across the alloy range. This model is compared with experimentally determined donor and acceptor levels extracted from the temperature dependence of muonium amplitudes.

Original languageEnglish
Pages (from-to)617-620
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 2007 Dec 15

Keywords

  • Group IV elements
  • Hydrogen impurity
  • Muonium
  • SiGe alloys

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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