Muonium defect levels in Czochralski-grown silicon-germanium alloys

B. R. Carroll, R. L. Lichti, P. J.C. King, Y. G. Celebi, I. Yonenaga, K. H. Chow

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We report Muonium (Mu) donor and acceptor levels in Czochralski-grown Silicon Germanium alloys (Cz-Si1-x Gex). Measurement of these defect energies provides an analogous examination of Hydrogen defects that are otherwise inaccessible. Temperature-dependent Muonium fractions in several alloy samples (x=0.20,0.45,0.77,0.81,0.84,0.90,0.91,0.94,0.98) show charge-state transitions assigned to Mu donor and acceptor ionizations. Our results indicate a deep Mu donor level across the alloy system. The Mu acceptor level is deep in pure Si and valence-band resonant in pure Ge; we specifically examine the compositional dependence of the Mu T0 acceptor ionization energy in Ge-rich alloys, where this level crosses into the valence band.

Original languageEnglish
Article number205205
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
Publication statusPublished - 2010 Nov 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Muonium defect levels in Czochralski-grown silicon-germanium alloys'. Together they form a unique fingerprint.

Cite this