TY - JOUR
T1 - Muonium defect levels in Czochralski-grown silicon-germanium alloys
AU - Carroll, B. R.
AU - Lichti, R. L.
AU - King, P. J.C.
AU - Celebi, Y. G.
AU - Yonenaga, I.
AU - Chow, K. H.
PY - 2010/11/10
Y1 - 2010/11/10
N2 - We report Muonium (Mu) donor and acceptor levels in Czochralski-grown Silicon Germanium alloys (Cz-Si1-x Gex). Measurement of these defect energies provides an analogous examination of Hydrogen defects that are otherwise inaccessible. Temperature-dependent Muonium fractions in several alloy samples (x=0.20,0.45,0.77,0.81,0.84,0.90,0.91,0.94,0.98) show charge-state transitions assigned to Mu donor and acceptor ionizations. Our results indicate a deep Mu donor level across the alloy system. The Mu acceptor level is deep in pure Si and valence-band resonant in pure Ge; we specifically examine the compositional dependence of the Mu T0 acceptor ionization energy in Ge-rich alloys, where this level crosses into the valence band.
AB - We report Muonium (Mu) donor and acceptor levels in Czochralski-grown Silicon Germanium alloys (Cz-Si1-x Gex). Measurement of these defect energies provides an analogous examination of Hydrogen defects that are otherwise inaccessible. Temperature-dependent Muonium fractions in several alloy samples (x=0.20,0.45,0.77,0.81,0.84,0.90,0.91,0.94,0.98) show charge-state transitions assigned to Mu donor and acceptor ionizations. Our results indicate a deep Mu donor level across the alloy system. The Mu acceptor level is deep in pure Si and valence-band resonant in pure Ge; we specifically examine the compositional dependence of the Mu T0 acceptor ionization energy in Ge-rich alloys, where this level crosses into the valence band.
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U2 - 10.1103/PhysRevB.82.205205
DO - 10.1103/PhysRevB.82.205205
M3 - Article
AN - SCOPUS:78649739606
VL - 82
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 20
M1 - 205205
ER -