Muonium behaviour in Czochralski grown Si1-xGex alloys

P. J.C. King; R. L. Lichti; I. Yonenaga

doi:10.1016/S0921-4526(02)01593-4

Muonium behaviour in Czochralski grown Si_1-xGe_x alloys

P. J.C. King, R. L. Lichti, I. Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Si_1-xGe_x alloys have generated much interest over the past decade due to their ability to provide new electrical properties and functionality whilst using existing silicon device fabrication technology. Devices are produced using epitaxial Si_1-xGe_x alloy grown on to an Si substrate, but the potential uses of epitaxial Si_1-xGe_x have generated interest in the unstrained, bulk alloy material which can be grown by the Czochralski method. We report on observations of muonium in Si_1-xGe_x alloys with x = 0.2, 0.45 and 0.77. The behaviour of diamagnetic muons and bond centred and tetrahedral muonium is described below 200 K and compared with behaviour observed in the unalloyed elemental materials. In particular, a linear dependence on alloy composition of the average value of the isotropic component of the bond-centred muonium hyperfine parameter has been found.

Original language	English
Pages (from-to)	171-174
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	326
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(02)01593-4
Publication status	Published - 2003 Feb

Keywords

Bond-centered muonium
Hyperfine parameter
Semiconductors
SiGe alloys

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Muonium behaviour in Czochralski grown Si1-xGex alloys",

abstract = "Si1-xGex alloys have generated much interest over the past decade due to their ability to provide new electrical properties and functionality whilst using existing silicon device fabrication technology. Devices are produced using epitaxial Si1-xGex alloy grown on to an Si substrate, but the potential uses of epitaxial Si1-xGex have generated interest in the unstrained, bulk alloy material which can be grown by the Czochralski method. We report on observations of muonium in Si1-xGex alloys with x = 0.2, 0.45 and 0.77. The behaviour of diamagnetic muons and bond centred and tetrahedral muonium is described below 200 K and compared with behaviour observed in the unalloyed elemental materials. In particular, a linear dependence on alloy composition of the average value of the isotropic component of the bond-centred muonium hyperfine parameter has been found.",

keywords = "Bond-centered muonium, Hyperfine parameter, Semiconductors, SiGe alloys",

author = "King, {P. J.C.} and Lichti, {R. L.} and I. Yonenaga",

note = "Funding Information: We would like to thank staff at TRIUMF, particularly Bassam Hitti, for assistance with experiments. PJCK would like to thank the EPSRC (Grant GR/N64977) for financial support. RLL would like to thank the US NSF and the Robert A Welch Foundation. ",

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AU - King, P. J.C.

AU - Lichti, R. L.

AU - Yonenaga, I.

N1 - Funding Information: We would like to thank staff at TRIUMF, particularly Bassam Hitti, for assistance with experiments. PJCK would like to thank the EPSRC (Grant GR/N64977) for financial support. RLL would like to thank the US NSF and the Robert A Welch Foundation.

PY - 2003/2

Y1 - 2003/2

N2 - Si1-xGex alloys have generated much interest over the past decade due to their ability to provide new electrical properties and functionality whilst using existing silicon device fabrication technology. Devices are produced using epitaxial Si1-xGex alloy grown on to an Si substrate, but the potential uses of epitaxial Si1-xGex have generated interest in the unstrained, bulk alloy material which can be grown by the Czochralski method. We report on observations of muonium in Si1-xGex alloys with x = 0.2, 0.45 and 0.77. The behaviour of diamagnetic muons and bond centred and tetrahedral muonium is described below 200 K and compared with behaviour observed in the unalloyed elemental materials. In particular, a linear dependence on alloy composition of the average value of the isotropic component of the bond-centred muonium hyperfine parameter has been found.

AB - Si1-xGex alloys have generated much interest over the past decade due to their ability to provide new electrical properties and functionality whilst using existing silicon device fabrication technology. Devices are produced using epitaxial Si1-xGex alloy grown on to an Si substrate, but the potential uses of epitaxial Si1-xGex have generated interest in the unstrained, bulk alloy material which can be grown by the Czochralski method. We report on observations of muonium in Si1-xGex alloys with x = 0.2, 0.45 and 0.77. The behaviour of diamagnetic muons and bond centred and tetrahedral muonium is described below 200 K and compared with behaviour observed in the unalloyed elemental materials. In particular, a linear dependence on alloy composition of the average value of the isotropic component of the bond-centred muonium hyperfine parameter has been found.

KW - Bond-centered muonium

KW - Hyperfine parameter

KW - Semiconductors

KW - SiGe alloys

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