TY - JOUR
T1 - Muonium behaviour in Czochralski grown Si1-xGex alloys
AU - King, P. J.C.
AU - Lichti, R. L.
AU - Yonenaga, I.
N1 - Funding Information:
We would like to thank staff at TRIUMF, particularly Bassam Hitti, for assistance with experiments. PJCK would like to thank the EPSRC (Grant GR/N64977) for financial support. RLL would like to thank the US NSF and the Robert A Welch Foundation.
PY - 2003/2
Y1 - 2003/2
N2 - Si1-xGex alloys have generated much interest over the past decade due to their ability to provide new electrical properties and functionality whilst using existing silicon device fabrication technology. Devices are produced using epitaxial Si1-xGex alloy grown on to an Si substrate, but the potential uses of epitaxial Si1-xGex have generated interest in the unstrained, bulk alloy material which can be grown by the Czochralski method. We report on observations of muonium in Si1-xGex alloys with x = 0.2, 0.45 and 0.77. The behaviour of diamagnetic muons and bond centred and tetrahedral muonium is described below 200 K and compared with behaviour observed in the unalloyed elemental materials. In particular, a linear dependence on alloy composition of the average value of the isotropic component of the bond-centred muonium hyperfine parameter has been found.
AB - Si1-xGex alloys have generated much interest over the past decade due to their ability to provide new electrical properties and functionality whilst using existing silicon device fabrication technology. Devices are produced using epitaxial Si1-xGex alloy grown on to an Si substrate, but the potential uses of epitaxial Si1-xGex have generated interest in the unstrained, bulk alloy material which can be grown by the Czochralski method. We report on observations of muonium in Si1-xGex alloys with x = 0.2, 0.45 and 0.77. The behaviour of diamagnetic muons and bond centred and tetrahedral muonium is described below 200 K and compared with behaviour observed in the unalloyed elemental materials. In particular, a linear dependence on alloy composition of the average value of the isotropic component of the bond-centred muonium hyperfine parameter has been found.
KW - Bond-centered muonium
KW - Hyperfine parameter
KW - Semiconductors
KW - SiGe alloys
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U2 - 10.1016/S0921-4526(02)01593-4
DO - 10.1016/S0921-4526(02)01593-4
M3 - Article
AN - SCOPUS:0037304532
VL - 326
SP - 171
EP - 174
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
ER -