Si1-xGex alloys have generated much interest over the past decade due to their ability to provide new electrical properties and functionality whilst using existing silicon device fabrication technology. Devices are produced using epitaxial Si1-xGex alloy grown on to an Si substrate, but the potential uses of epitaxial Si1-xGex have generated interest in the unstrained, bulk alloy material which can be grown by the Czochralski method. We report on observations of muonium in Si1-xGex alloys with x = 0.2, 0.45 and 0.77. The behaviour of diamagnetic muons and bond centred and tetrahedral muonium is described below 200 K and compared with behaviour observed in the unalloyed elemental materials. In particular, a linear dependence on alloy composition of the average value of the isotropic component of the bond-centred muonium hyperfine parameter has been found.
- Bond-centered muonium
- Hyperfine parameter
- SiGe alloys
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering