Multislice imaging of integrated circuits by precession X-ray ptychography

Kei Shimomura; Makoto Hirose; Yukio Takahashi

doi:10.1107/S205327331701525X

Multislice imaging of integrated circuits by precession X-ray ptychography

Kei Shimomura, Makoto Hirose, Yukio Takahashi

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A method for nondestructively visualizing multisection nanostructures of integrated circuits by X-ray ptychography with a multislice approach is proposed. In this study, tilt-series ptychographic diffraction data sets of a two-layered circuit with a a1.4 μm gap at nine incident angles are collected in a wide Q range and then artifact-reduced phase images of each layer are successfully reconstructed at a10 nm resolution. The present method has great potential for the three-dimensional observation of flat specimens with thickness on the order of 100 μm, such as three-dimensional stacked integrated circuits based on through-silicon vias, without laborious sample preparation.A method for nondestructively visualizing multisection nanostructures of integrated circuits by X-ray ptychography with a multislice approach is proposed.

Original language	English
Pages (from-to)	66-70
Number of pages	5
Journal	Acta Crystallographica Section A: Foundations and Advances
Volume	74
Issue number	1
DOIs	https://doi.org/10.1107/S205327331701525X
Publication status	Published - 2018 Jan
Externally published	Yes

Keywords

X-ray ptychography
integrated circuits
multislice approach

ASJC Scopus subject areas

Structural Biology
Biochemistry
Materials Science(all)
Condensed Matter Physics
Physical and Theoretical Chemistry
Inorganic Chemistry

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10.1107/S205327331701525X

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abstract = "A method for nondestructively visualizing multisection nanostructures of integrated circuits by X-ray ptychography with a multislice approach is proposed. In this study, tilt-series ptychographic diffraction data sets of a two-layered circuit with a a1.4 μm gap at nine incident angles are collected in a wide Q range and then artifact-reduced phase images of each layer are successfully reconstructed at a10 nm resolution. The present method has great potential for the three-dimensional observation of flat specimens with thickness on the order of 100 μm, such as three-dimensional stacked integrated circuits based on through-silicon vias, without laborious sample preparation.A method for nondestructively visualizing multisection nanostructures of integrated circuits by X-ray ptychography with a multislice approach is proposed.",

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