Abstract
A method for nondestructively visualizing multisection nanostructures of integrated circuits by X-ray ptychography with a multislice approach is proposed. In this study, tilt-series ptychographic diffraction data sets of a two-layered circuit with a a1.4 μm gap at nine incident angles are collected in a wide Q range and then artifact-reduced phase images of each layer are successfully reconstructed at a10 nm resolution. The present method has great potential for the three-dimensional observation of flat specimens with thickness on the order of 100 μm, such as three-dimensional stacked integrated circuits based on through-silicon vias, without laborious sample preparation.A method for nondestructively visualizing multisection nanostructures of integrated circuits by X-ray ptychography with a multislice approach is proposed.
Original language | English |
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Pages (from-to) | 66-70 |
Number of pages | 5 |
Journal | Acta Crystallographica Section A: Foundations and Advances |
Volume | 74 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2018 Jan |
Externally published | Yes |
Keywords
- X-ray ptychography
- integrated circuits
- multislice approach
ASJC Scopus subject areas
- Structural Biology
- Biochemistry
- Materials Science(all)
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Inorganic Chemistry