Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films

Yuta Saito, Yun Heub Song, Jung Min Lee, Yuji Suto, Junichi Koike

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

Original languageEnglish
Article number6293847
Pages (from-to)1399-1401
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number10
DOIs
Publication statusPublished - 2012 Sep 7

Keywords

  • Ge Cu Te and Ge Sb Te (GST)
  • multilevel cell (MLC)
  • phase-change random access memory (PCRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Multiresistance characteristics of PCRAM with Ge <sub>1</sub>Cu <sub>2</sub>Te <sub>3</sub> and Ge <sub>2</sub> Sb <sub>2</sub>Te <sub>5</sub> films'. Together they form a unique fingerprint.

Cite this