Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films

Yuta Saito; Yun Heub Song; Jung Min Lee; Yuji Suto; Junichi Koike

doi:10.1109/LED.2012.2210534

Multiresistance characteristics of PCRAM with Ge ₁Cu ₂Te ₃ and Ge ₂ Sb ₂Te ₅ films

Yuta Saito, Yun Heub Song, Jung Min Lee, Yuji Suto, Junichi Koike

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge ₁sb ₂Te ₅ (GST) and Ge1Cu2Te ₃ (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 ³, 10 ⁴, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

Original language	English
Article number	6293847
Pages (from-to)	1399-1401
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	10
DOIs	https://doi.org/10.1109/LED.2012.2210534
Publication status	Published - 2012 Sep 7

Keywords

Ge Cu Te and Ge Sb Te (GST)
multilevel cell (MLC)
phase-change random access memory (PCRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films",

abstract = "A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.",

keywords = "Ge Cu Te and Ge Sb Te (GST), multilevel cell (MLC), phase-change random access memory (PCRAM)",

author = "Yuta Saito and Song, {Yun Heub} and Lee, {Jung Min} and Yuji Suto and Junichi Koike",

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T1 - Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films

AU - Saito, Yuta

AU - Song, Yun Heub

AU - Lee, Jung Min

AU - Suto, Yuji

AU - Koike, Junichi

PY - 2012/9/7

Y1 - 2012/9/7

N2 - A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

AB - A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

KW - Ge Cu Te and Ge Sb Te (GST)

KW - multilevel cell (MLC)

KW - phase-change random access memory (PCRAM)

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