Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films

Yuta Saito; Yun Heub Song; Jung Min Lee; Yuji Sutou; Junichi Koike

doi:10.1109/LED.2012.2210534

Multiresistance characteristics of PCRAM with Ge ₁Cu ₂Te ₃ and Ge ₂ Sb ₂Te ₅ films

Yuta Saito, Yun Heub Song, Jung Min Lee, Yuji Sutou, Junichi Koike

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge ₁sb ₂Te ₅ (GST) and Ge1Cu2Te ₃ (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 ³, 10 ⁴, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

Original language	English
Article number	6293847
Pages (from-to)	1399-1401
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	10
DOIs	https://doi.org/10.1109/LED.2012.2210534
Publication status	Published - 2012

Keywords

Ge Cu Te and Ge Sb Te (GST)
multilevel cell (MLC)
phase-change random access memory (PCRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2012.2210534

Cite this

@article{1c32adf989954aceb6ed0bada5446a03,

title = "Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films",

abstract = "A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.",

keywords = "Ge Cu Te and Ge Sb Te (GST), multilevel cell (MLC), phase-change random access memory (PCRAM)",

author = "Yuta Saito and Song, {Yun Heub} and Lee, {Jung Min} and Yuji Sutou and Junichi Koike",

note = "Funding Information: Manuscript received February 7, 2012; accepted July 21, 2012. Date of publication August 31, 2012; date of current version September 21, 2012. This work was supported by the IT R&D Program of the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (MKE/KEIT) (10039200, Development of High Performance Phase Change Materials) and in part by the Brain Korea 21 Project in 2012. The review of this letter was arranged by Editor T. San.",

year = "2012",

doi = "10.1109/LED.2012.2210534",

language = "English",

volume = "33",

pages = "1399--1401",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

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T1 - Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films

AU - Saito, Yuta

AU - Song, Yun Heub

AU - Lee, Jung Min

AU - Sutou, Yuji

AU - Koike, Junichi

N1 - Funding Information: Manuscript received February 7, 2012; accepted July 21, 2012. Date of publication August 31, 2012; date of current version September 21, 2012. This work was supported by the IT R&D Program of the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (MKE/KEIT) (10039200, Development of High Performance Phase Change Materials) and in part by the Brain Korea 21 Project in 2012. The review of this letter was arranged by Editor T. San.

PY - 2012

Y1 - 2012

N2 - A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

AB - A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

KW - Ge Cu Te and Ge Sb Te (GST)

KW - multilevel cell (MLC)

KW - phase-change random access memory (PCRAM)

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