TY - JOUR
T1 - Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films
AU - Saito, Yuta
AU - Song, Yun Heub
AU - Lee, Jung Min
AU - Sutou, Yuji
AU - Koike, Junichi
N1 - Funding Information:
Manuscript received February 7, 2012; accepted July 21, 2012. Date of publication August 31, 2012; date of current version September 21, 2012. This work was supported by the IT R&D Program of the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (MKE/KEIT) (10039200, Development of High Performance Phase Change Materials) and in part by the Brain Korea 21 Project in 2012. The review of this letter was arranged by Editor T. San.
PY - 2012
Y1 - 2012
N2 - A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.
AB - A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.
KW - Ge Cu Te and Ge Sb Te (GST)
KW - multilevel cell (MLC)
KW - phase-change random access memory (PCRAM)
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U2 - 10.1109/LED.2012.2210534
DO - 10.1109/LED.2012.2210534
M3 - Article
AN - SCOPUS:84866929577
VL - 33
SP - 1399
EP - 1401
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 10
M1 - 6293847
ER -