Multiple-valued logic-in-memory VLSI architecture based on floating-gate-MOS pass-transistor logic

Takahiro Hanyu, Michitaka Kameyama

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

A new logic-in-memory VLSI architecture based on multiple-valued floating-gate-MOS pass-transistor logic is proposed to solve the communication bottleneck between memory and logic modules. Multiple-valued stored data are represented by the threshold voltage of a floating-gate MOS transistor, so that a single floating-gate MOS transistor is effectively employed to merge multiple-valued threshold-literal and pass-switch functions. As an application, a four-valued logic-in-memory VLSI for high-speed pattern recognition is also presented. The proposed VLSI detects a stored reference word with the minimum Manhattan distance between a 16-bit input word and 16-bit stored reference words. The effective chip area, the switching delay and the power dissipation of a new four-valued full adder, which is a key component of the proposed logic-in-memory VLSI, are reduced to about 33 percent, 67 percent and 24 percent, respectively, in comparison with those of the corresponding binary CMOS implementation under a 0.5-μm flash EEPROM technology.

Original languageEnglish
Pages (from-to)1662-1668
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE82-C
Issue number9
Publication statusPublished - 1999 Jan 1

Keywords

  • Flash EEP-ROM technology
  • Floating-gate MOS transistor
  • Four-valued full adder
  • Logic-in-memory structure
  • Manhattan distance
  • Pass-transistor network

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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