A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.
|Number of pages||6|
|Journal||Proceedings of The International Symposium on Multiple-Valued Logic|
|Publication status||Published - 1996 Jan 1|
|Event||Proceedings of the 1996 26th International Symposium on Multiple-Valued Logic - Santiago de Compostela, Spain|
Duration: 1996 May 29 → 1996 May 31
ASJC Scopus subject areas
- Computer Science(all)