Multiple-valued ferroelectric content-addressable memory

Ali Sheikholeslami; P. Glenn Gulak; Takahiro Hanyu

Multiple-valued ferroelectric content-addressable memory

Ali Sheikholeslami, P. Glenn Gulak, Takahiro Hanyu

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.

Original language	English
Pages (from-to)	74-79
Number of pages	6
Journal	Proceedings of The International Symposium on Multiple-Valued Logic
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 26th International Symposium on Multiple-Valued Logic - Santiago de Compostela, Spain Duration: 1996 May 29 → 1996 May 31

ASJC Scopus subject areas

Computer Science(all)
Mathematics(all)

Cite this

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abstract = "A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.",

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N2 - A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.

AB - A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.

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JO - Proceedings of The International Symposium on Multiple-Valued Logic

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Y2 - 29 May 1996 through 31 May 1996

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Multiple-valued ferroelectric content-addressable memory

Abstract

ASJC Scopus subject areas

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