Multiple-valued content-addressable memory using metal-ferroelectric-semiconductor FETs

Takahiro Hanyu, Hiromitsu Kimura, Michitaka Kameyama

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


This paper presents a design of a non-volatile multiple-valued content-addressable memory (MVCAM) using metal-ferroelectric-semiconductor (MFS) FETs. An MFSFET is an important device with a non-destructive read scheme. Multiple-valued stored data are directly represented by remnant polarization states that correspond to threshold voltages of an MFSFET. Since one-digit comparison between multiple-valued input and stored data is performed by the combination of two different threshold operations, a one-digit comparator can be designed by two MFSFETs. The use of the one-digit comparator makers it possible to design a compact MVCAM cell. It is evaluated that the performance of the proposed MVCAM is superior to that of some binary and multiple-valued CAMs in terms of bit density, peripheral-circuit complexity, access speed, and functionality.

Original languageEnglish
Pages (from-to)30-35
Number of pages6
JournalProceedings of The International Symposium on Multiple-Valued Logic
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1999 29th International Symposium on Multiple-Valued Logic (ISMVL-99) - Freiburg im Breisgau, Ger
Duration: 1999 May 201999 May 22

ASJC Scopus subject areas

  • Chemical Health and Safety
  • Hardware and Architecture
  • Safety, Risk, Reliability and Quality
  • Logic


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