Abstract
This paper presents a design of a non-volatile multiple-valued content-addressable memory (MVCAM) using metal-ferroelectric-semiconductor (MFS) FETs. An MFSFET is an important device with a non-destructive read scheme. Multiple-valued stored data are directly represented by remnant polarization states that correspond to threshold voltages of an MFSFET. Since one-digit comparison between multiple-valued input and stored data is performed by the combination of two different threshold operations, a one-digit comparator can be designed by two MFSFETs. The use of the one-digit comparator makers it possible to design a compact MVCAM cell. It is evaluated that the performance of the proposed MVCAM is superior to that of some binary and multiple-valued CAMs in terms of bit density, peripheral-circuit complexity, access speed, and functionality.
| Original language | English |
|---|---|
| Pages (from-to) | 30-35 |
| Number of pages | 6 |
| Journal | Proceedings of The International Symposium on Multiple-Valued Logic |
| Publication status | Published - 1999 Jan 1 |
| Event | Proceedings of the 1999 29th International Symposium on Multiple-Valued Logic (ISMVL-99) - Freiburg im Breisgau, Ger Duration: 1999 May 20 → 1999 May 22 |
ASJC Scopus subject areas
- Chemical Health and Safety
- Hardware and Architecture
- Safety, Risk, Reliability and Quality
- Logic