Abstract
Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO2-type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO2-type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO2 and β-AgGaO2, the photocatalytic activities of β-AgGaO2 and β-AgAlO2, and the discovery that β-CuGaO2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO2-type oxide semiconductors - β-LiGaO2, β-AgGaO2, β-AgAlO2, β-CuGaO2 - and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO2-type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO2-type oxide semiconductors.
Original language | English |
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Article number | 013007 |
Journal | Semiconductor Science and Technology |
Volume | 32 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2017 Jan |
Keywords
- band-gap engineering
- electrical property
- electronic band structure
- first-principles calculation
- optical property
- oxide semiconductors
- ternary wurtzite structure
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry