Multinary wurtzite-type oxide semiconductors: Present status and perspectives

Research output: Contribution to journalReview articlepeer-review

6 Citations (Scopus)

Abstract

Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO2-type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO2-type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO2 and β-AgGaO2, the photocatalytic activities of β-AgGaO2 and β-AgAlO2, and the discovery that β-CuGaO2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO2-type oxide semiconductors - β-LiGaO2, β-AgGaO2, β-AgAlO2, β-CuGaO2 - and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO2-type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO2-type oxide semiconductors.

Original languageEnglish
Article number013007
JournalSemiconductor Science and Technology
Volume32
Issue number1
DOIs
Publication statusPublished - 2017 Jan
Externally publishedYes

Keywords

  • band-gap engineering
  • electrical property
  • electronic band structure
  • first-principles calculation
  • optical property
  • oxide semiconductors
  • ternary wurtzite structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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