Multilayer indium saving ITO thin films produced by sputtering method

L. Voisin; M. Ohtsuka; S. Petrovska; R. Sergiienko; Takashi Nakamura

doi:10.1016/j.jallcom.2020.154378

Multilayer indium saving ITO thin films produced by sputtering method

L. Voisin, M. Ohtsuka, S. Petrovska, R. Sergiienko, Takashi Nakamura

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Deposition of multilayer indium saving indium-tin oxide (ITO) thin films was attempted to achieve both low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In₂O₃-10 mass % SnO₂) and indium saving indium-tin oxide (In₂O₃-50 mass % SnO₂) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 μΩcm, mobility 28 cm²/V·s and carrier concentration 5.32 10²⁰ cm⁻³_. Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (S_a) and root mean square height (S_q) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively.

Original language	English
Article number	154378
Journal	Journal of Alloys and Compounds
Volume	827
DOIs	https://doi.org/10.1016/j.jallcom.2020.154378
Publication status	Published - 2020 Jun 25
Externally published	Yes

Keywords

Direct current sputtering
Electrical properties
Indium tin oxide
Optical properties
Surface roughness

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2020.154378

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title = "Multilayer indium saving ITO thin films produced by sputtering method",

abstract = "Deposition of multilayer indium saving indium-tin oxide (ITO) thin films was attempted to achieve both low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 μΩcm, mobility 28 cm2/V·s and carrier concentration 5.32 1020 cm−3. Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (Sa) and root mean square height (Sq) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively.",

keywords = "Direct current sputtering, Electrical properties, Indium tin oxide, Optical properties, Surface roughness",

author = "L. Voisin and M. Ohtsuka and S. Petrovska and R. Sergiienko and Takashi Nakamura",

note = "Funding Information: The present research was supported by New Energy and Industrial Technology Development Organization (NEDO), Japan . Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = jun,

day = "25",

doi = "10.1016/j.jallcom.2020.154378",

language = "English",

volume = "827",

journal = "Journal of Alloys and Compounds",

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publisher = "Elsevier BV",

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TY - JOUR

T1 - Multilayer indium saving ITO thin films produced by sputtering method

AU - Voisin, L.

AU - Ohtsuka, M.

AU - Petrovska, S.

AU - Sergiienko, R.

AU - Nakamura, Takashi

PY - 2020/6/25

Y1 - 2020/6/25

N2 - Deposition of multilayer indium saving indium-tin oxide (ITO) thin films was attempted to achieve both low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 μΩcm, mobility 28 cm2/V·s and carrier concentration 5.32 1020 cm−3. Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (Sa) and root mean square height (Sq) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively.

AB - Deposition of multilayer indium saving indium-tin oxide (ITO) thin films was attempted to achieve both low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 μΩcm, mobility 28 cm2/V·s and carrier concentration 5.32 1020 cm−3. Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (Sa) and root mean square height (Sq) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively.

KW - Direct current sputtering

KW - Electrical properties

KW - Indium tin oxide

KW - Optical properties

KW - Surface roughness

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U2 - 10.1016/j.jallcom.2020.154378

DO - 10.1016/j.jallcom.2020.154378

M3 - Article

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VL - 827

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

M1 - 154378

ER -

Multilayer indium saving ITO thin films produced by sputtering method

Abstract

Keywords

ASJC Scopus subject areas

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