Multilayer indium saving ITO thin films produced by sputtering method

L. Voisin, M. Ohtsuka, S. Petrovska, R. Sergiienko, Takashi Nakamura

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Deposition of multilayer indium saving indium-tin oxide (ITO) thin films was attempted to achieve both low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 μΩcm, mobility 28 cm2/V·s and carrier concentration 5.32 1020 cm−3. Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (Sa) and root mean square height (Sq) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively.

Original languageEnglish
Article number154378
JournalJournal of Alloys and Compounds
Publication statusPublished - 2020 Jun 25
Externally publishedYes


  • Direct current sputtering
  • Electrical properties
  • Indium tin oxide
  • Optical properties
  • Surface roughness

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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