Multidomain Dynamics of Ferroelectric Polarization and its Coherency-Breaking in Negative Capacitance Field-Effect Transistors

Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi Hattori, Hidehiro Asai, Kazuhiko Endo, Shinji Migita, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, for the first time, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Effect Transistors (NCFETs) by an in-house Technology Computer-Aided Design (TCAD) module. It enables self-consistent simulations among the time-dependent Landau-Khalatnikov equation and the other equations that govern operation of FETs. Our simulation reveals that domain-wall thickness T dw, which reflects a correlation strength between domains predominates coherency of the NC polarization. In a strong correlation (large T dw) case, a coherent NC polarization is realized at least to a degree of T dw. On the other hand, in a weak correlation (small T dw) case, perturbation from peripherals easily leads to incoherence of polarization, where a uniform polarization is split into multiple spontaneous polarization domains. This coherency breaking found to give rise to deteriorated voltage amplification of NC. Design methodology to maintain the NC coherency is also proposed.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages9.1.1-9.1.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Externally publishedYes
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/TerritoryUnited States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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