Multi-bit memory cell using long-range non-anchored actuation for high temperature applications

Mehrdad Elyasi, Chengkuo Lee, Cheng Yu Hsieh, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel micro-electro-mechanical (MEM) based non-volatile memory (NVM) is proposed. The storage principle is based on Lorentz's transduction, utilizing long-range motion of a non-anchored element which has current carrying sliding contact with a conductive path. Position of the moving element indicates the stored data in the multi-bit cell. Data is written in the cell with displacing the moving element by Lorentz's force, is read by utilizing differential port resistances, and is held by adhesion forces. Data writing at up to , and data retention and reading for higher temperatures are reliable.

Original languageEnglish
Title of host publicationInternational Conference and Exhibition on High Temperature Electronics Network, HiTEN 2013
PublisherIMAPS-International Microelectronics and Packaging Society
Pages152-159
Number of pages8
ISBN (Electronic)9781634391146
Publication statusPublished - 2013 Jan 1
Externally publishedYes
EventInternational Conference and Exhibition on High Temperature Electronics Network, HiTEN 2013 - Oxford, United Kingdom
Duration: 2013 Jul 82013 Jul 10

Publication series

NameInternational Conference and Exhibition on High Temperature Electronics Network, HiTEN 2013

Conference

ConferenceInternational Conference and Exhibition on High Temperature Electronics Network, HiTEN 2013
CountryUnited Kingdom
CityOxford
Period13/7/813/7/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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