Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process

Takeshi Matsumura, Masayoshi Esashi, Hiroshi Harada, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A compact multi-band RF front-end architecture is strongly required and a multi-band RF filter bank is a key component for future mobile phones based on cognitive wireless technology. We have developed a novel CMOS-compatible process for the integration of a multi-band filter with LSI. Different modes of AlN/Si composite piezoelectric MEMS resonators, i.e. film bulk acoustic resonators (FBARs) and disk-type resonators, were co-fabricated on a dummy Si wafer. A ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically-coupled disk-array filter with a center frequency of 292.8 MHz were also prototyped and characterized.

Original languageEnglish
Title of host publication2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2141-2144
Number of pages4
ISBN (Print)9781424443895
DOIs
Publication statusPublished - 2009
Event2009 IEEE International Ultrasonics Symposium, IUS 2009 - Rome, Italy
Duration: 2009 Sep 202009 Sep 23

Publication series

NameProceedings - IEEE Ultrasonics Symposium
ISSN (Print)1051-0117

Other

Other2009 IEEE International Ultrasonics Symposium, IUS 2009
CountryItaly
CityRome
Period09/9/2009/9/23

Keywords

  • CMOS-MEMS
  • Disk-type resonator
  • FBAR
  • Multi-band filter
  • RF MEMS

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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