Multi-band radio-frequency filters fabricated using polyimide-based membrane transfer bonding technology

Takeshi Matsumura; Masayoshi Esashi; Hiroshi Harada; Shuji Tanaka

doi:10.1088/0960-1317/20/9/095027

Multi-band radio-frequency filters fabricated using polyimide-based membrane transfer bonding technology

Takeshi Matsumura, Masayoshi Esashi, Hiroshi Harada, Shuji Tanaka

ENG - Robotics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

In this paper, we present a polyimide-based Si membrane transfer bonding technology and its application to CMOS-compatible integration of different modes of AlN/Si composite piezoelectric MEMS resonators. The thermosetting polyimide, which has excellent chemical resistance and thermal stability, is used as a bonding adhesion, and is successfully removed as a sacrificial layer by O ₂ plasma to release free-standing MEMS devices. The whole process temperature is below 350 °C and compatible with CMOS LSI. Using this technology, different modes of AlN/Si resonators, which are film bulk acoustic wave resonators and wine-glass mode disk-type resonators, have been co-fabricated on the same wafer. We also fabricated a ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically coupled disk-array filter with a center frequency of 292.8 GHz.

Original language	English
Article number	095027
Journal	Journal of Micromechanics and Microengineering
Volume	20
Issue number	9
DOIs	https://doi.org/10.1088/0960-1317/20/9/095027
Publication status	Published - 2010 Sep 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0960-1317/20/9/095027

Cite this

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abstract = "In this paper, we present a polyimide-based Si membrane transfer bonding technology and its application to CMOS-compatible integration of different modes of AlN/Si composite piezoelectric MEMS resonators. The thermosetting polyimide, which has excellent chemical resistance and thermal stability, is used as a bonding adhesion, and is successfully removed as a sacrificial layer by O 2 plasma to release free-standing MEMS devices. The whole process temperature is below 350 °C and compatible with CMOS LSI. Using this technology, different modes of AlN/Si resonators, which are film bulk acoustic wave resonators and wine-glass mode disk-type resonators, have been co-fabricated on the same wafer. We also fabricated a ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically coupled disk-array filter with a center frequency of 292.8 GHz.",

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AU - Matsumura, Takeshi

AU - Esashi, Masayoshi

AU - Harada, Hiroshi

AU - Tanaka, Shuji

PY - 2010/9/1

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N2 - In this paper, we present a polyimide-based Si membrane transfer bonding technology and its application to CMOS-compatible integration of different modes of AlN/Si composite piezoelectric MEMS resonators. The thermosetting polyimide, which has excellent chemical resistance and thermal stability, is used as a bonding adhesion, and is successfully removed as a sacrificial layer by O 2 plasma to release free-standing MEMS devices. The whole process temperature is below 350 °C and compatible with CMOS LSI. Using this technology, different modes of AlN/Si resonators, which are film bulk acoustic wave resonators and wine-glass mode disk-type resonators, have been co-fabricated on the same wafer. We also fabricated a ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically coupled disk-array filter with a center frequency of 292.8 GHz.

AB - In this paper, we present a polyimide-based Si membrane transfer bonding technology and its application to CMOS-compatible integration of different modes of AlN/Si composite piezoelectric MEMS resonators. The thermosetting polyimide, which has excellent chemical resistance and thermal stability, is used as a bonding adhesion, and is successfully removed as a sacrificial layer by O 2 plasma to release free-standing MEMS devices. The whole process temperature is below 350 °C and compatible with CMOS LSI. Using this technology, different modes of AlN/Si resonators, which are film bulk acoustic wave resonators and wine-glass mode disk-type resonators, have been co-fabricated on the same wafer. We also fabricated a ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically coupled disk-array filter with a center frequency of 292.8 GHz.

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Multi-band radio-frequency filters fabricated using polyimide-based membrane transfer bonding technology

Abstract

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