M2O-Al2O3-SiO2 GLASS GATE pNa AND pK ISFETs.

Shunichi Shoji; Masayoshi Esashi; Tadayuki Matsuo

doi:10.1002/ecjb.4420690503

M₂O-Al₂O₃-SiO₂ GLASS GATE pNa AND pK ISFETs.

Shunichi Shoji, Masayoshi Esashi, Tadayuki Matsuo

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

Abstract

To improve the capability of the ISFETs for measuring pNa and pK in living bodies, the ion selectivity of its sensor M//2O-Al//2O//3-SiO//2 (MAS, where M is an alkali metal) glass membrane was studied. The MAS membrane has been used as an ion-sensitive membrane of pNa and pK glass electrode and it has been known that its selectivity depends on the composition of the MAS membrane. To obtain the maximum ion selectivity of the pNa and pK ISFET, the relationship between the ion selectivity and the composition of the MAS membrane was investigated by measuring the ion selectivity over various compositions.

Original language	English
Pages (from-to)	19-27
Number of pages	9
Journal	Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume	69
Issue number	5
DOIs	https://doi.org/10.1002/ecjb.4420690503
Publication status	Published - 1986 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)
Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1002/ecjb.4420690503

Fingerprint Dive into the research topics of 'M2O-Al2O3-SiO2 GLASS GATE pNa AND pK ISFETs.'. Together they form a unique fingerprint.

Cite this

@article{ef83607efcdf4b258017d84cb8bc0c31,

title = "M2O-Al2O3-SiO2 GLASS GATE pNa AND pK ISFETs.",

abstract = "To improve the capability of the ISFETs for measuring pNa and pK in living bodies, the ion selectivity of its sensor M//2O-Al//2O//3-SiO//2 (MAS, where M is an alkali metal) glass membrane was studied. The MAS membrane has been used as an ion-sensitive membrane of pNa and pK glass electrode and it has been known that its selectivity depends on the composition of the MAS membrane. To obtain the maximum ion selectivity of the pNa and pK ISFET, the relationship between the ion selectivity and the composition of the MAS membrane was investigated by measuring the ion selectivity over various compositions.",

author = "Shunichi Shoji and Masayoshi Esashi and Tadayuki Matsuo",

year = "1986",

month = jan,

day = "1",

doi = "10.1002/ecjb.4420690503",

language = "English",

volume = "69",

pages = "19--27",

journal = "Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)",

issn = "8756-663X",

publisher = "Scripta Technica",

number = "5",

}

TY - JOUR

T1 - M2O-Al2O3-SiO2 GLASS GATE pNa AND pK ISFETs.

AU - Shoji, Shunichi

AU - Esashi, Masayoshi

AU - Matsuo, Tadayuki

PY - 1986/1/1

Y1 - 1986/1/1

N2 - To improve the capability of the ISFETs for measuring pNa and pK in living bodies, the ion selectivity of its sensor M//2O-Al//2O//3-SiO//2 (MAS, where M is an alkali metal) glass membrane was studied. The MAS membrane has been used as an ion-sensitive membrane of pNa and pK glass electrode and it has been known that its selectivity depends on the composition of the MAS membrane. To obtain the maximum ion selectivity of the pNa and pK ISFET, the relationship between the ion selectivity and the composition of the MAS membrane was investigated by measuring the ion selectivity over various compositions.

AB - To improve the capability of the ISFETs for measuring pNa and pK in living bodies, the ion selectivity of its sensor M//2O-Al//2O//3-SiO//2 (MAS, where M is an alkali metal) glass membrane was studied. The MAS membrane has been used as an ion-sensitive membrane of pNa and pK glass electrode and it has been known that its selectivity depends on the composition of the MAS membrane. To obtain the maximum ion selectivity of the pNa and pK ISFET, the relationship between the ion selectivity and the composition of the MAS membrane was investigated by measuring the ion selectivity over various compositions.

UR - http://www.scopus.com/inward/record.url?scp=0022599057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022599057&partnerID=8YFLogxK

U2 - 10.1002/ecjb.4420690503

DO - 10.1002/ecjb.4420690503

M3 - Article

VL - 69

SP - 19

EP - 27

JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

SN - 8756-663X

IS - 5

ER -