Abstract
MRAM-writing circuitry to compensate for the thermal variation of the magnetization-reversal current is proposed. The writing current of the proposed circuitry is designed to decrease in proportion to an increase in temperature. This technique prevents multiple-write failures from degrading 1 Gb MRAM yield where the standard deviation of magnetization-reversal current variation from other origins is less than 5%.
Original language | English |
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Pages (from-to) | 612-617 |
Number of pages | 6 |
Journal | IEICE Transactions on Electronics |
Volume | E86-C |
Issue number | 4 |
Publication status | Published - 2003 Apr |
Externally published | Yes |
Keywords
- MRAM
- Magnetization reversal current
- Thermal variation compensation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering