MRAM writing circuitry to compensate for thermal variation of magnetization reversal current

Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Hideaki Numata, Sadahiko Miura, Hiromitsu Hada, Shuichi Tahara

Research output: Contribution to journalArticlepeer-review

Abstract

MRAM-writing circuitry to compensate for the thermal variation of the magnetization-reversal current is proposed. The writing current of the proposed circuitry is designed to decrease in proportion to an increase in temperature. This technique prevents multiple-write failures from degrading 1 Gb MRAM yield where the standard deviation of magnetization-reversal current variation from other origins is less than 5%.

Original languageEnglish
Pages (from-to)612-617
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE86-C
Issue number4
Publication statusPublished - 2003 Apr
Externally publishedYes

Keywords

  • MRAM
  • Magnetization reversal current
  • Thermal variation compensation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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