MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

H. Yamanaka, K. Saito, K. Takanashi, H. Fujimori

Research output: Contribution to journalConference articlepeer-review

Abstract

In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

Original languageEnglish
JournalDigests of the Intermag Conference
Publication statusPublished - 1999 Dec 1
Externally publishedYes
EventProceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea
Duration: 1999 May 181999 May 21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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